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In this paper, a graded-index strained Si 1−x Ge x optical PN phase shifter with multiple strained layers has been proposed for high speed data modulation at 1550 nm with low device footprint. The quasi-vectorial finite difference method, non-local empirical pseudopotential method and the Payne-Lacey model has been used to analyze the proposed device. A phase shift of 122 • /mm, V π L π of 0.74 V.cm, and insertion loss of 4 dB at 5 V reverse bias with a 3-dB modulation bandwidth of 27.5 GHz has been obtained for a 500 nm × 250 nm cross-section rib waveguide with 50 nm slab. A 15 • /mm increase in phase shift and 0.08 V.cm decrease in V π L π has been observed when the junction is shifted by 60 nm towards the N side.

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