Design and Analysis of a Graded-Index Strained Si&lt;inline-formula&gt;
                     &lt;tex-math notation="LaTeX"&gt;$_{1-x}$ &lt;/tex-math&gt;
                  &lt;/inline-formula&gt;Ge&lt;inline-formula&gt;
                     &lt;tex-math notation="LaTeX"&gt;$_x$&lt;/tex-math&gt;
                  &lt;/inline-formula&gt; Optical PN Phase Shifter

Mishra, Darpan; Sonkar, Ramesh Kumar

doi:10.1109/jphot.2018.2880077

Cited by 12 publications

(1 citation statement)

References 39 publications

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“…Optical modulators modulate data that are sent via photons through a fiber. The silicon PN modulators are fast, and modulation occurs through the use of phase shifters using the free-carrier plasma dispersion (FCPD) effect [6]; [7]. The modulator characteristics are highly dependent on the phase shifter metrics, which are the phase shift, loss, and bandwidth.…”

Section: Introductionmentioning

confidence: 99%

A TCAD study on the effect of process parameters on silicon optical phase shifter performance

Mishra

Sonkar

2023

Front. Phys.

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On-chip integrated optical phase shifters are an important part of optical phase modulators. The performance of such modulators relies heavily on the phase shifter performance, which in turn depends on multiple process parameters. This paper reports the study of the effect of different process parameters on the performance of a silicon PN optical phase shifter obtained by process simulation using Silvaco® TCAD. The effect of dopant implantation dose, implantation energy, annealing temperature and time, wafer temperature, wafer tilt and rotation, and pre-amorphization on the phase and absorption of light is discussed. The 3-dB modulation bandwidth of a lumped phase shifter and the dependency of the performance metrics on different process parameters are presented. Monte Carlo numerical simulation shows that the free-carrier absorption has a much greater dependency on the process parameters than the phase shift. The study shows that ion channeling poses a limiting factor on the phase shifter performance, which can be improved by tilting the wafer or using a pre-amorphized substrate for implantation. The study shows that the 3-dB modulation bandwidth is highly dependent on the wafer tilt angle, rotation angle, and the lattice structure of the solid substrate. A bandwidth improvement of more than 5× is observed with 1.7× lower absorption for a pre-amorphized sample at −5 V compared to a crystalline sample with the same process flow.

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Section: Introductionmentioning

confidence: 99%

A TCAD study on the effect of process parameters on silicon optical phase shifter performance

Mishra

Sonkar

2023

Front. Phys.

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Analysis of a process simulated graded-index strained silicon-germanium optical phase shifter

Mishra

Sonkar

2019

Optical Materials

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On-chip silicon photonic controllable 2 × 2 four-mode waveguide switch

Truong¹,

Hang²,

Chandrahalim

et al. 2021

Sci Rep

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Multimode optical switch is a key component of mode division multiplexing in modern high-speed optical signal processing. In this paper, we introduce for the first time a novel 2 × 2 multimode switch design and demonstrate in the proof-of-concept. The device composes of four Y-multijunctions and 2 × 2 multimode interference coupler using silicon-on-insulator material with four controllable phase shifters. The shifters operate using thermo-optic effects utilizing Ti heaters enabling simultaneous switching of the optical signal between the output ports on four quasi-transverse electric modes with the electric power consumption is in order of 22.5 mW and the switching time is 5.4 µs. The multimode switch exhibits a low insertion loss and a low crosstalk below − 3 dB and − 19 dB, respectively, in 50 nm bandwidth in the third telecom window from 1525 to 1575 nm. With a compact footprint of 10 µm × 960 µm, this device exhibits a relatively large width tolerance of ± 20 nm and a height tolerance of ± 10 nm. Furthermore, the conceptual principle of the proposed multimode switch can be reconfigurable and scalable in multifunctional on-chip mode-division multiplexing optical interconnects.

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Design and Analysis of a Graded-Index Strained Si<inline-formula> <tex-math notation="LaTeX">$_{1-x}$ </tex-math> </inline-formula>Ge<inline-formula> <tex-math notation="LaTeX">$_x$</tex-math> </inline-formula> Optical PN Phase Shifter

Cited by 12 publications

References 39 publications

A TCAD study on the effect of process parameters on silicon optical phase shifter performance

A TCAD study on the effect of process parameters on silicon optical phase shifter performance

Analysis of a process simulated graded-index strained silicon-germanium optical phase shifter

On-chip silicon photonic controllable 2 × 2 four-mode waveguide switch

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