A computer-aided design system for microelectromechanical systems (MEMCAD)

Senturia, S.D.; Harris, Regina M.; Johnson, B.P.; Kim, S.; Nabors, K.; Shulman, M A; White, Jacob K.

doi:10.1109/84.128049

Cited by 179 publications

(64 citation statements)

References 32 publications

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“…Due to the increasing design complexity and the emergence of MEMS/IC co-design, Electronic Design Automation (EDA) tools are highly desired for device-level and system-level MEMS design [8]- [15]. This paper presents a robust and general-purpose framework to simulate two key parameters in MEMS design: the pull-in and lift-off voltages.…”

Section: A Motivationmentioning

confidence: 99%

Continuation-Based Pull-In and Lift-Off Simulation Algorithms for Microelectromechanical Devices

Zhang

Kamon²,

Daniel

2014

J. Microelectromech. Syst.

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Abstract-The voltages at which Micro-Electro-Mechanical (MEM) actuators and sensors become unstable, known as pullin and lift-off voltages, are critical parameters in MEMS design. The state-of-the-art MEMS simulators compute these parameters by simply sweeping the voltage, leading to either excessively large computational cost, or to convergence failure near the pull-in or lift-off points. This paper proposes to simulate the behavior at pull-in and lift-off employing two continuation-based algorithms. The first algorithm appropriately adapts standard continuation methods, providing a complete set of static solutions. The second algorithm uses continuation to trace two kinds of curves and generates the sweep-up or sweep-down curves, which can provide more intuition to MEMS designers. The algorithms presented in this paper are robust and suitable for general-purpose industrial MEMS designs. Our algorithms have been implemented in a commercial MEMS/IC co-design tool, and their effectiveness is validated by comparisons against measurement data and the commercial FEM/BEM solver CoventorWare.

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Section: A Motivationmentioning

confidence: 99%

Continuation-Based Pull-In and Lift-Off Simulation Algorithms for Microelectromechanical Devices

Zhang

Kamon²,

Daniel

2014

J. Microelectromech. Syst.

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“…For this reason, there has been a steady effort over the last decade to develop nearly automatic approaches for generating accurate macromodels of micromachined devices starting from only layout and process descriptions. Most efforts is this area are following a three step approach [18], [11], [19].…”

Section: Numerical Macromodelingmentioning

confidence: 99%

Emerging simulation approaches for micromachined devices

Mukherjee

Fedder

Ramaswamy

et al. 2000

IEEE Trans. Comput.-Aided Des. Integr. Circuits Syst.

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Abstract-In this survey paper, we describe and contrast three different approaches for extending circuit simulation to include micromachined devices. The most commonly used method, that of using physical insight to develop parameterized macromodels, is presented first. The issues associated with fitting the parameters to simulation data while incorporating design attribute dependencies are considered. The numerical model order reduction approach to macromodeling is presented second, and some of the issues associated with fast solvers and model reduction are summarized. Lastly, we describe the recently developed circuit-based approach for simulating micromachined devices, and describe the design hierarchy and the use of a catalog of parts.

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“…The commercial software package MEMCAD [17], for example, uses the commercial FEM software package ABAQUS for mechanical analysis, together with a BEM code FastCap [18] for the electric field analysis. Other examples of such work are [19,20,21,22]; as well as [17,23,24] for dynamic analysis of MEMS. A recently published paper [25] addresses the problem of charge distribution on multiwalled nanotubes, with a classical electrostatics model, by employing a full three-dimensional (3-D) BEM approach.…”

Section: Introductionmentioning

confidence: 99%

Charge distribution on thin semiconducting silicon nanowires

Chen

Mukherjee

Aluru

2008

Computer Methods in Applied Mechanics and Engineering

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The subject of this paper is the calculation of charge distribution on and inside thin semiconducting silicon nanowires in electrostatic problems, by a coupled Finite and Boundary Element Method (FEM/BEM). A hybrid semiclassical (Laplace/Poisson) model is employed and a line model (with finite thickness) for a silicon nanowire of circular cross-section is proposed here. This model overcomes the problem of dealing with nearly singular matrices that occur when the standard BEM is applied to very thin features (objects or gaps). This new approach is also very efficient. Numerical results are presented for selected examples.

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A computer-aided design system for microelectromechanical systems (MEMCAD)

Cited by 179 publications

References 32 publications

Continuation-Based Pull-In and Lift-Off Simulation Algorithms for Microelectromechanical Devices

Continuation-Based Pull-In and Lift-Off Simulation Algorithms for Microelectromechanical Devices

Emerging simulation approaches for micromachined devices

Charge distribution on thin semiconducting silicon nanowires

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