A computer program that generates an RF electrical model of the parasitics of QFP packages

Caggiano, M.F.

doi:10.1109/ectc.1997.606319

Cited by 5 publications

(3 citation statements)

References 3 publications

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“…The bonding wires connecting the die pads to the package pinouts are effectively short wires, which have a small resistance and inductance per unit length . A model of three bond wire in parallel is shown in Figure .…”

Section: Bonding Wire Modelmentioning

confidence: 99%

“…The bonding wires connecting the die pads to the package pinouts are effectively short wires, which have a small resistance and inductance per unit length [12,13]. A model of three bond wire in parallel is shown in Figure 4 [14,15]. As seen in Figure 4, the pad parasitic capacitance is labeled as C, and the bonding wire resistance is indicated by R W .…”

Section: Bonding Wire Modelmentioning

confidence: 99%

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A 1–6 GHz analog radio frequency power driver in 90 nm complementary metal‐oxide semiconductor technology for wireless applications

Ren

Abraham

Hong

2013

Circuit Theory & Apps

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SUMMARYOne of the most challenging subsystems for integrated radio frequency (RF) complementary metal-oxide semiconductor (CMOS) solutions is the power amplifier. A 1-6 GHz RF power driver (RFPD) in 90 nm CMOS technology is presented, which receives signals from on-chip RF signal chain components at À12 dBm power levels and produces a 0 dBm signal to on-chip or off-chip 50 Ω loads. A unique unit cell design is developed for the RFPD to offset issues associated with very wide multi-fingered transistors. The RF driver was fabricated as a stand-alone sub-circuit on a 90 nm CMOS die with other sub-circuits. Experimental tests confirmed that the on-chip RFPD operates up to 6 GHz and is able to drive 50 Ω loads to the desired 0 dBm power level. Spur free dynamic range exceeded 70 dB. The measured power gain was 11.6 dB at 3 GHz. The measured 1 dB compression point and input third-order intercept point (IIP3) were À4.7 dBm and À0.5 dBm, respectively. Also, included are modeling, simulation, and measured results addressing issues associated with interfacing the die to a package with pinouts and the package to a printed circuit test fixture. The simulations were made through direct current (DC), alternating current (AC), and transient analysis with Cadence Analog Design Environment. The stability was also verified on the basis of phase margin simulations from extracted circuit net-lists.

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Section: Bonding Wire Modelmentioning

confidence: 99%

Section: Bonding Wire Modelmentioning

confidence: 99%

A 1–6 GHz analog radio frequency power driver in 90 nm complementary metal‐oxide semiconductor technology for wireless applications

Ren

Abraham

Hong

2013

Circuit Theory & Apps

View full text Add to dashboard Cite

show abstract

“…There is, therefore, a great need to establish an equivalent model that can account for all kinds of high-frequency effects, such as resonance, coupling, dispersion, and frequency-dependent losses. In the past, electrical modeling techniques for the packages based on simulation were used to construct the equivalent LCR matrices [1]- [4]. However, these matrices were mainly low-frequency results and possessed difficulties in interpreting all the above-mentioned phenomena effectively.…”

Section: Introductionmentioning

confidence: 99%

Complete methodology for electrical modeling of RFIC packages

Horng

Wu²,

Shih³

2001

IEEE Trans. Adv. Packag.

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Abstract-A complete methodology based on broadband -parameter measurement is proposed to establish the electrical models for radio-frequency integrated circuit (RFIC) packages. The research is focused on calibration of the test-fixture parasitics to obtain the intrinsic -parameters from which an equivalent coupled lumped model can be extracted for any pair of package leads under test. Then a step-by-step optimization scheme is employed to construct an equivalent circuit for the whole package. A real example on modeling a 16-lead Thin Shrink Small Outline Package (TSSOP) has been demonstrated. The established model can account for various package effects at radio frequencies.

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A novel approach to 3-D modeling of packaged RF power transistors

Johansson

Arnborg

1999

IEEE Trans. Microwave Theory Techn.

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A computer program that generates an RF electrical model of the parasitics of QFP packages

Cited by 5 publications

References 3 publications

A 1–6 GHz analog radio frequency power driver in 90 nm complementary metal‐oxide semiconductor technology for wireless applications

A 1–6 GHz analog radio frequency power driver in 90 nm complementary metal‐oxide semiconductor technology for wireless applications

Complete methodology for electrical modeling of RFIC packages

A novel approach to 3-D modeling of packaged RF power transistors

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