A conducting polymer–silicon heterojunction as a new ultraviolet photodetector

Cardenas, Javier; Vasconcelos, Elder A. de; Azevêdo, W.M. de; Silva, E.F. da; Pepe, I. M.; Silva, A. Ferreira da; Ribeiro, S. Santedicola; Silva, K. Abreu

doi:10.1016/j.apsusc.2008.07.038

Cited by 15 publications

(6 citation statements)

References 11 publications

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“…The optical absorptions of EB at about 2 and 3.5 eV differ from that of ES at about 1.5, 3.0, and 4.1 eV . Recently, p‐type conducting polymers in junction with n‐type inorganic semiconductors such as Si, ZnO, ZnGa 2 O 4 , SnO 2 , CdSe, and TiO 2 have been fabricated as the self‐powered photoelectric devices due to p–n organic/inorganic heterojunctions. However, the conducting polymers layer is usually coated by physical blending or electrochemical deposition in neutral electrolyte to lose their electrical conductivity .…”

Section: Introductionmentioning

confidence: 99%

Novel p–p Heterojunctions Self‐Powered Broadband Photodetectors with Ultrafast Speed and High Responsivity

Chen

et al. 2017

Adv Funct Materials

146

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Novel inorganic/organic self-powered UV-vis photodetectors based on single Se microtube and conducting polymers-polyaniline (PANI), polypyrrole (PPy), and poly(3,4-ethylenedioxythiophene) (PEDOT)-are fabricated. The conducting polymers are directly coated on the surface of a single Se microtube via a facile and low-cost in situ polymerization method. The integrated Se/PANI photodetector with 45-nm-thick PANI layer shows excellent self-powered behavior under UV-vis light illumination. In particular, it exhibits high on/off ratio of 1.1 × 10 3 , responsivity (120 mA W −1 ), large detectivity (3.78 × 10 11 Jones), and ultrafast response speed (rise time of 4.5 µs and fall time of 2.84 ms) at zero bias at 610 nm (0.434 mW cm −2 )-light illumination. Moreover, the individual Se/PPy and Se/PEDOT self-powered photo detectors also exhibit fast and stable responses, including responsivity of 70 and 5.5 mA W −1 , rise time of 0.35 and 1.00 ms, fall time of 16.97 and 9.78 ms, respectively. Given the simple device architecture and low cost fabrication process, this work provides a promising way to fabricate inorganic/ organic, high-performance, self-powered photodetectors.

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Section: Introductionmentioning

confidence: 99%

Novel p–p Heterojunctions Self‐Powered Broadband Photodetectors with Ultrafast Speed and High Responsivity

Chen

et al. 2017

Adv Funct Materials

146

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“…Polymeric conductors and semiconductors are often preferred in organic solar cells, transistors, and photodetectors for their controllable electrical properties, high transparency, and potentials for flexible electronics [113]- [117]. For example, PAni was spin coated on a silicon wafer to form a heterojunction for detection of ultraviolet (UV) [118]. Poly(3hexylthiophene) (P3HT), a kind of p-type semiconductor, was utilized with ZnO NRs to fabricate a hybrid photoanode that demonstrated a high photoconversion efficiency and stability [119].…”

Section: A Photodetectormentioning

confidence: 99%

Device Based on Polymer Schottky Junctions and Their Applications: A Review

Suo

Zhou

et al. 2020

IEEE Access

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Polymeric materials are emerging as an important component for organic electronics due to their combined features of soft materials and organic semiconductor/conductor. Different from solid-state bulk materials, polymers are synthesized and modulated with a facile method, with their controllable properties. Therefore, polymers have been recently used in Schottky junction devices that demonstrate features of enhanced performances, flexibility, and easy processing. Polymer-based Schottky junctions have drawn a lot of interest in several prototype applications like photodetectors, energy harvesters, and gas sensors. With this review, we summarize recent progress in synthesis and modulation of polymers and fabrication of polymer-based Schottky junction devices. Designs of applications of sensory devices like photodetectors, energy harvesters, and gas sensors are also presented.

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“…The use of polymers as insulating interfaces in Schottky structures has a considerably long history . They are widely used in organic SCs and PDs, mainly due to their properties, as mentioned above, and also their high transparency. − Today, it can be said that it is often preferred in optoelectronic applications, which are gradually developing. Polymers have been used as interfaces in such studies in their pristine form or by doping with various filling nanostructures (metals, metal oxides, graphene, GO, etc.)…”

Section: Introductionmentioning

confidence: 99%

Electrical and Photodetector Characteristics of Schottky Structures Interlaid with P(EHA) and P(EHA-co-AA) Functional Polymers by the iCVD Method

Demirezen,

Ulusoy,

Durmuş

et al. 2023

ACS Omega

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In this study, poly(2-ethylhexyl acrylate) (PEHA) homopolymer and its copolymer combined with acrylic acid P(EHA- co -AA) were employed as interfaces in two separate Schottky structures. First, both interfaces were grown by initiated chemical vapor deposition (iCVD), which provides much better deposition control and homogeneous coating compared to solution-phase methods. In addition to this advantageous method, the effects of two different polymers, one of which is better able to adhere to the crystal surface on which it is formed than the other, on the optoelectronic properties have been studied. Then, their current–voltage ( I – V ) and capacitance/conductance–voltage ( C /( G /ω)– V ) characteristics were investigated both in the dark and under illumination. The basic electrical parameters and the illumination-induced profile of the surface state ( N ss ) were probed by I – V and C – V measurements for two samples. A decrease in the barrier height (BH) and, consequently, a significant increase in the photocurrent were observed under illumination. Striking changes in series resistance ( R s ) values are also highlighted. The photocapacitance and conductance characteristics indicated that the structures could be considered not only as photodiodes but also as photocapacitors. Moreover, the voltage-dependent changes of some photodetector parameters, such as responsivity ( R ), sensitivity ( S ), and specific detectivity ( D *), along with the transient photocurrent characteristics, are discussed for both structures. Therefore, we can say that the strong changes in these parameters, which figure the merit of photodiode and photodetector applications, depending on the voltage and under illumination, prove that it is a study carried out in accordance with the purpose and so they can be used in electronic and optoelectronic applications.

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A conducting polymer–silicon heterojunction as a new ultraviolet photodetector

Cited by 15 publications

References 11 publications

Novel p–p Heterojunctions Self‐Powered Broadband Photodetectors with Ultrafast Speed and High Responsivity

Novel p–p Heterojunctions Self‐Powered Broadband Photodetectors with Ultrafast Speed and High Responsivity

Device Based on Polymer Schottky Junctions and Their Applications: A Review

Electrical and Photodetector Characteristics of Schottky Structures Interlaid with P(EHA) and P(EHA-co-AA) Functional Polymers by the iCVD Method

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