A Continually-Stepped Variable-Gain LNA in 65-nm CMOS Enabled by a Tunable-Transformer for mm-Wave 5G Communications

Ali, Sheikh Nijam; Hoque, Aminul; Gopal, Srinivasan; Chahardori, Mohammad; Mokri, Mohammad Ali; Heo, Deukhyoun

doi:10.1109/mwsym.2019.8701023

Cited by 24 publications

(6 citation statements)

References 9 publications

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“…CS-LNA with degenerated inductor is given in [4], in contrast to that the inductor in source branch is replaced by a gyrator -C active inductor, to provide the tunablity in the circuit. The device uses an active phase shifter in the amplifier's feedback loop to change the phase of signal amplified as indicated in [17,18]. Cascode structures [19,20] can also be used to incorporate the advantages such as reduced Miller effect, large bandwidth and also noise figure can also be reduced.…”

Section: Practical Considerations Of Lnamentioning

confidence: 99%

A gyrator-C active inductor based tunable low noise amplifier for sub-GHz frequency range

Prashar,

Kapur

2024

Eng. Res. Express

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The propose exhibits a tunable low noise amplifier (LNA), which provides the tunability at sub-GHz frequency range and hence can become choicest frequency range for 5G applications. Common source (CS) with source degeneration inductor LNA is proposed; in which the inductor in source branch is replaced by gyrator-c active inductor which not only reduced the overall area of the circuit but can also be used to provide the feature of tunability by changing the bias voltage of CMOS based active resistor in feedback branch. Therefore, instead of having a LNA circuit for the fixed frequency, a single tunable LNA design can be used over a range of frequency from 1GHz to 5GHz. The proposed approach will provide the direct tuning to the circuit. The forward voltage gain achieved is greater than 10dB, input matching parameter is less than -10dB and the output matching parameter is less than -10dB. The average power dissipated is 0.02W. The results can be tuned by controlling the feedback voltage of tunable active inductor (Tunable_AI). The tunable results can be achieved up to the bandwidth of 1GHz.

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Section: Practical Considerations Of Lnamentioning

confidence: 99%

A gyrator-C active inductor based tunable low noise amplifier for sub-GHz frequency range

Prashar,

Kapur

2024

Eng. Res. Express

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“…However, the area of the input-matching network was excessively large, and the three RF input ports were difficult to integrate into a system. In [21] and [22], the SSIs are integrated with switching devices. They were used to implement variable gain LNA [21] and a frequency-reconfigurable power amplifier [22].…”

Section: Introductionmentioning

confidence: 99%

“…In [21] and [22], the SSIs are integrated with switching devices. They were used to implement variable gain LNA [21] and a frequency-reconfigurable power amplifier [22]. Liang et al [14] used a coupling transformer wide-band design on an input-matching network; transistors were used to switch the interstage-and output-matching networks to achieve a switched multiband.…”

Section: Introductionmentioning

confidence: 99%

Ka-/K-Band Frequency-Reconfigurable Single-Input Differential-Output Low-Noise Amplifier for 5G Applications

Chen

Tsai

2023

IEEE Microw. Wireless Tech. Lett.

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This letter describes the design, analysis, and performance measurements of a K a-and K -band frequencyreconfigurable single-input differential-output (SIDO) low-noise amplifier (LNA) with a compact core size of 0.157 mm 2 . At 28 and 39 GHz, respectively, the noise figures of the LNA were 2.8 and 4.4 dB; it had high differential gains of 20.1 and 14.9 dB. The proposed LNA was fabricated using the 65-nm CMOS process. The LNA includes a two-stage common-source (CS) buffer amplifier to achieve low noise and an active balun for converting single-ended signals into differential signals. Moreover, a substrate-shield-based inductor and tunable matching networks were used to achieve the frequency reconfiguration function of the LNA. The gain and phase imbalances were 0.3 and 0.2 dB, and 5.4 • and 6 • at 28 and 39 GHz, respectively. Compared with published multiband SIDO LNAs, the proposed amplifier achieved higher figures of merit (FoMs) of 3.52 and 1.77 while maintaining a compact core size. Therefore, the LNA is suitable for K -and K a-band 5G communication applications.

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“…Previous studies have proposed various gain control (GC) approaches and demonstrated VGA designs in the mmWave frequency bands [5]- [17]. In [5]- [9], straightforward gain control methods that simply tune the resistive/inductive impedance at the load or an attenuator between stages through control signals were presented.…”

Section: Introductionmentioning

confidence: 99%

“…This limitation eventually prevents the VGA from performing the role of an LNA. The variable-gain LNA (VGLNA) in [17] employed a tunable coupling coefficient (k) transformer to change the output matching condition to ensure that the gain could be varied with a relatively small noise figure (NF) degradation. However, an extra LNA is utilized as the first stage in the design and its GCR is also limited by the design complexity of the tunable coupling coefficient of the transformer.…”

Section: Introductionmentioning

confidence: 99%

CMOS Variable-Gain Low-Noise Amplifier Adopting Transformer-Based Noise Cancelling Technique for 5G NR FR2 Applications

Kim,

Kim

et al. 2023

IEEE Access

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This study presents a complementary metal-oxide-semiconductor (CMOS) variable-gain low-noise amplifier (VGLNA) employing a transformer-based noise cancelling technique, applicable for fifth-generation new radio frequency range 2 communication. In the proposed design, gain controllability is realized by combining the in-phase main and current-steering path signals through a transformer load whose coupling coefficient is less than unity. Additionally, the noise contribution from cascode devices can be diminished through a transformer-based noise cancelling technique in low-gain modes. Consequently, an enhanced noise performance is achieved as the gain of the VGLNA is lowered. The proposed design is fabricated in a 65-nm CMOS process. At 28 GHz, the implemented VGLNA attains gains and noise figures of 12.1 to 2.7 dB and 3.55 to 4.3 dB, respectively. The design draws a bias current of 10.6 mA with a 1 V nominal supply and occupies a die size of 0.13 mm2, excluding bonding pads.INDEX TERMS Complementary metal-oxide-semiconductor (CMOS), current-steering, fifth-generation (5G) new radio (NR), frequency range 2 (FR2), low-noise amplifier (LNA), noise cancelling, transformer, variable-gain amplifier (VGA).JUNGHWAN HAN (Member, IEEE) received the B. S. degree (Hons.

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A Continually-Stepped Variable-Gain LNA in 65-nm CMOS Enabled by a Tunable-Transformer for mm-Wave 5G Communications

Cited by 24 publications

References 9 publications

A gyrator-C active inductor based tunable low noise amplifier for sub-GHz frequency range

A gyrator-C active inductor based tunable low noise amplifier for sub-GHz frequency range

Ka-/K-Band Frequency-Reconfigurable Single-Input Differential-Output Low-Noise Amplifier for 5G Applications

CMOS Variable-Gain Low-Noise Amplifier Adopting Transformer-Based Noise Cancelling Technique for 5G NR FR2 Applications

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