A Continuous Semianalytic Current Model for DG and NW TFETs

Wu, Jing Cynthia; Taur, Yuan

doi:10.1109/ted.2015.2509468

Cited by 14 publications

(4 citation statements)

References 25 publications

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“…E ⊥m is the smaller of E and (m c /m v )(V 2 − E). This model has been validated by atomistic simulations [6], [11]. Fig.…”

Section: Tfet Model With Drain Depletionmentioning

confidence: 89%

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Reduction of TFET OFF-Current and Subthreshold Swing by Lightly Doped Drain

Taur

2016

IEEE Trans. Electron Devices

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This brief models the effect of lightly doped drain on the I ds -V gs and I ds -V ds characteristics of tunnel FETs. It is shown that an extended drain depletion region can greatly reduce both the off-current and the subthreshold swing with essentially no impact on the on-current. In particular, a lightly doped drain mitigates the undesirable ambipolar effect that cannot otherwise be relieved by lengthening the channel length. However, if the density of states is not sufficiently low, a low drain doping could result in a nondegenerate condition in which the tunneling window is blocked at V ds = 0, degrading the linear region current. Index Terms-Ambipolar effect, band-to-band tunneling, short-channel effect, tunnel FET (TFET).Jianzhi Wu (S'14) received the B.S. degree in optical information science and technology from Southeast University, Nanjing, China, in 2010, and the M.S.

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“…E ⊥m is the smaller of E and (m c /m v )(V 2 − E). This model has been validated by atomistic simulations [6], [11]. Fig.…”

Section: Tfet Model With Drain Depletionmentioning

confidence: 89%

“…If m c and m v are the effective masses of the conduction and the valence band, the conservation of momentum requires m v E ⊥v = m c E ⊥c . Franz's two-band E(k) relation is employed for tunneling in the channel region [6], [7] …”

Section: Tfet Model With Drain Depletionmentioning

confidence: 99%

Reduction of TFET OFF-Current and Subthreshold Swing by Lightly Doped Drain

Taur

2016

IEEE Trans. Electron Devices

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“…The basic TFET structure is a gate-controlled p-i-n diode, in which the dominant transport mechanism is band-to-band tunneling (BTBT), instead of drift-diffusion. This way, it is theoretically possible to obtain a sub-60 mV/decade subthreshold swing (SS) at room temperature [7][8][9]. On the other hand, measurements of point tunneling devices revealed that the magnitude of trap-assisted tunneling (TAT) in the OFFstate region may be a critical issue to reach the expected SS values [10,11].…”

Section: Introductionmentioning

confidence: 99%

Performance of differential pair circuits designed with line tunnel FET devices at different temperatures

Martino

Agopian

et al. 2018

Semicond. Sci. Technol.

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This work studies differential pair circuits designed with Line tunnel field effect transistors (TFETs), comparing their suitability with conventional Point TFETs. Differential voltage gain (A d), compliance voltage and sensitivity to channel length mismatch are analyzed experimentally for different temperatures. The first part highlights individual characteristics of Line TFETs, focusing on behaviors that affect analog circuits. In comparison to Point TFETs, Line TFETs present higher drive current, better transconductance and worse output conductance. In the second part, differential pairs are studied at room temperature for different dimensions and bias conditions. Line TFETs present the highest A d , while Point TFET decrease the susceptibility to channel length mismatch. In the last part, the temperature impact is investigated. Based on the activation energy, the impact of band-to-band tunneling and trapassisted tunneling is discussed for different bias conditions. A general equation is proposed, including the technology and the susceptibility to temperature and dimensions. It was observed that Line TFETs are a good option to design differential pairs with higher A d and ON-state current than Point TFETs.

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“…TFETs are based on a gate-controlled p-i-n diode structure, with drift-diffusion transport being replaced by band-to-band tunneling (BTBT), which enables subthreshold swing (SS) values lower than 60 mV/decade at room temperature [7,8]. Lower parasitic capacitance and improved saturation behavior have also been reported as advantages of this technology [9,10].…”

Section: Introductionmentioning

confidence: 99%

Analysis of current mirror circuits designed with line tunnel FET devices at different temperatures

Martino

Agopian

et al. 2017

Semicond. Sci. Technol.

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The goal of this work is to study the performance of current mirror circuits designed with line tunnel field effect transistor (TFET) devices and compare the suitability of this technology with alternatives such as point TFETs and FinFETs. Experimental results have been obtained at room and high temperatures and the analyses focused on parameters such as the magnitude of the onstate current and the sensitivity of the current transfer ratio to channel dimensions mismatch and to the temperature. Line TFETs exhibited higher on-state current than point TFETs, in spite of a higher susceptibility to the channel length. When band-to-band tunneling prevails for both input and output transistors, the current transfer ratio with line TFETs presented a nearly linear dependence on the temperature due to bandgap narrowing. This way, a general equation of the current transfer ratio for circuits designed with the three highlighted technologies is proposed. Globally, it was observed that, unless a very low sensitivity to channel length mismatch is required, line TFET devices are a very suitable alternative for current mirror circuits, since this technology provides much higher on-state currents than point TFETs, and at the same time it is much less sensitive to temperature variations than FinFET transistors.

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A Continuous Semianalytic Current Model for DG and NW TFETs

Cited by 14 publications

References 25 publications

Reduction of TFET OFF-Current and Subthreshold Swing by Lightly Doped Drain

Reduction of TFET OFF-Current and Subthreshold Swing by Lightly Doped Drain

Performance of differential pair circuits designed with line tunnel FET devices at different temperatures

Analysis of current mirror circuits designed with line tunnel FET devices at different temperatures

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