A control technique of oxygen contamination by Ga beam irradiation in InN MOMBE growth

Abstract

We have investigated about a control technique of oxygen contamination into the InN layers by simultaneous irradiation of Ga beam during RF-MOMBE growth using the combination of the TMIn and the RFplasma nitrogen sources. Red shifts of the band gap energy and the improvement of the electrical properties have been achieved by the Ga beam irradiation. The suppresssion mechanism of the oxygen contamination has been discussed from the experimental results of the InN growth by the RF-MOMBE with the Ga beam irradiation. The present results strongly indicate that the simultaneous irradiation of the Ga beam would be useful to suppress the oxygen contamination into the InN layers during the growth.

Origins of n‐type residual carriers in RF‐MOMBE grown InN layers

“…We already reported that Hall mobility of the grown layers were more improved with shrinkage of band gap energy by the usage of TMIn in comparison with case of the metal In source [5]. Our previously proposed model has been also supported such improvements of the electrical properties of InN layers.…”

“…We have already reported that the usage of trimethylindium (TMIn) has a suppression effect to oxygen contaminations by formation of highly volatile products such as CO and/or CO 2 , produced by thermal decomposition process of TMIn during a radio frequency nitrogen plasma assisted metal organic molecular beam epitaxy (RF-MOMBE) under oxygen contaminated back grounds and that clearly red shift of absorption edge (E g ) was obtained. Moreover, we have also reported that simultaneous irradiation of Ga beam during growth is additionally very effective to suppress oxygen contamination and further red shifts of E g have been achieved as a result of the additional suppression effect [4], and we have proposed a possible model for such suppression of O contamination by formation of highly volatile products such as Ga 2 O and CO 2 during conventional RF-MOMBE growth by using TMIn [5]. In this paper, we have quantitatively investigated on the origins of residual electrons in RF-MOMBE grown InN layers to make clear some roles of oxygen incorporation for the band-gap widening.…”

A quantitative study of suppression effect for oxygen contamination by Ga beam irradiation in InN RF-MOMBE growth

“…Moreover, we also proposed a possible model of suppression of oxygen contamination by formation of highly volatile products such as Ga 2 O and CO 2 during the conventional RF-plasma assited metal organic molecular beam epitaxy (MOMBE) growth by using trimethylindium (TMIn) as shown in Fig. 1 [5]. In this paper, we quantitatively investigate the suppression effect of oxygen contamination into the InN layers to establish the relationship between the incorporated oxygen and residual carriers by secondary ion mass spectroscopy (SIMS).…”