2016
DOI: 10.1055/s-0035-1562531
|View full text |Cite
|
Sign up to set email alerts
|

A Convenient Synthesis of Dithieno[3,2-b:2′,3′-d]thiophenes from Thiophene

Abstract: A new synthetic method for dithieno[3,2-b:2′,3′-d]thiophenes was developed. The approach involves three steps starting from thiophene: tetraiodation of thiophene, selective dialkynylations on the 2,5-positions of the tetraiodothiophene, and finally CuI/TMEDA catalyzed double annulations of 2,5-dialkynyl-3,4-diiodothiophenes by Na 2 S, to afford dithieno[3,2-b:2′,3′-d]thiophene and its derivatives.

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
1

Citation Types

0
1
0

Year Published

2020
2020
2024
2024

Publication Types

Select...
5
1

Relationship

0
6

Authors

Journals

citations
Cited by 10 publications
(1 citation statement)
references
References 6 publications
0
1
0
Order By: Relevance
“…51 Meanwhile, as shown in Figure 7b, OFETs with PEDOT:PSS exhibited a linear relationship between drain current (I DS ) and drain voltages (V DS ) at low V DS due to efficient hole injection, indicating a low contact resistance between the electrodes and the semiconductors. To confirm the broad applicability of PEs in OFETs, we applied our method to two other high-performance organic semiconductors, including the p-type dithieno[3,2-b:20,30-d]thiophene derivatives (DTT-8) 52,53 and the n-type furan-thiophene quinoidal compound (TFT-CN) 54 (Figures S19−S22 and 24). The HOMO and LUMO energy levels of the three organic semiconductors, as presented in Table S4, exhibit partial alignment with the work function of PE-T (4.7 eV, Figure S25).…”
Section: ■ Results and Discussionmentioning
confidence: 99%
“…51 Meanwhile, as shown in Figure 7b, OFETs with PEDOT:PSS exhibited a linear relationship between drain current (I DS ) and drain voltages (V DS ) at low V DS due to efficient hole injection, indicating a low contact resistance between the electrodes and the semiconductors. To confirm the broad applicability of PEs in OFETs, we applied our method to two other high-performance organic semiconductors, including the p-type dithieno[3,2-b:20,30-d]thiophene derivatives (DTT-8) 52,53 and the n-type furan-thiophene quinoidal compound (TFT-CN) 54 (Figures S19−S22 and 24). The HOMO and LUMO energy levels of the three organic semiconductors, as presented in Table S4, exhibit partial alignment with the work function of PE-T (4.7 eV, Figure S25).…”
Section: ■ Results and Discussionmentioning
confidence: 99%