A cost effective embedded DRAM integration for high density memory and high performance logic using 0.15 μm technology node and beyond

Ha, Daewon; Shin, Dong-won; Koh, G.H.; Lee, Jae-Gu; Lee, Sanghyeon; Ahn, Yong-Seok; Jeong, Hae-Yong; Chung, Taeyoung; Kim, Kinam

doi:10.1109/16.848299

Cited by 23 publications

(1 citation statement)

References 18 publications

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“…As device down-scaling, however, physical vapor deposition, typically used for metal deposition, suffers from poor step coverage in high aspect ratio contact holes. 8,9) Therefore, ALD Ni is required for nanoscale device contact because ALD has excellent conformality and compatibility to current Si unit process. 10) Until now, although several studies on Ni ALD have been performed, they have showed limitations such as complex process, low purity, and low growth rate.…”

Section: Introductionmentioning

confidence: 99%

Plasma-Enhanced Atomic Layer Deposition of Ni

Lee

Bang

Kim

et al. 2010

Jpn. J. Appl. Phys.

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Ni plasma enhanced atomic layer deposition (PE-ALD) using bis(dimethylamino-2-methyl-2-butoxo)nickel [Ni(dmamb) 2 ] as a precursor and NH 3 or H 2 plasma as a reactant was comparatively investigated. PE-ALD Ni using NH 3 plasma showed higher growth rate, lower resistivity, and lower C content than that using H 2 plasma. PE-ALD Ni films were analyzed by X-ray photoelectron spectroscopy (XPS), scanning transmission electron microscopy (STEM), and electron energy loss spectroscopy (EELS). The results showed that the reaction chemistry of ALD using NH 3 plasma was clearly different with that using H 2 , probably due to the effects of NH x radicals. #

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Section: Introductionmentioning

confidence: 99%