A critical review of fabrication challenges and reliability issues in top/bottom gated MoS₂field-effect transistors

Abstract

The voyage of semiconductor industry to decrease the size of transistors to achieve superior device performance seems to near its physical dimensional limitations. The quest is on to explore emerging material systems that offer dimensional scaling to match the silicon- based technologies. The discovery of atomic flat two-dimensional (2D) materials has opened up a completely new avenue to fabricate transistors at sub-10 nanometer level which has the potential to compete with modern silicon-based semiconductor devices. Molybdenum disulfide (MoS2) is a two-dimensional layered material with novel semiconducting properties at atomic level seems like a promising candidate that can possibly meet the expectation of Moore’s law. This review discusses the various “fabrication challenges” in making MoS2 based electronic devices from start to finish. The review outlines the intricate challenges of substrate selection and various synthesis methods of mono layer and few-layer MoS2. The review focuses on the various techniques and methods to minimize interface defect density at substrate/MoS2 interface for optimum MoS2-based device performance. The tunable band-gap of MoS2 with varying thickness presents a unique opportunity for contact engineering to mitigate the contact resistance issue using different elemental metals. In this work, we present a comprehensive overview of different types of contact materials with myriad geometries that show a profound impact on device performance. The choice of different insulating/dielectric gate oxides on MoS2 in co-planar and vertical geometry is critically reviewed and the physical feasibility of the same is discussed. The experimental constraints of different encapsulation techniques on MoS2 and its effect on structural and electronic properties are extensively discussed.

Two-dimensional material assisted-growth strategy: new insights and opportunities

“…Materials constitute the fundamental building blocks of contemporary science and technology, serving as the bedrock upon which numerous modern advancements rest. The discovery of superior-performance materials stands as a crucial determinant in propelling the progress of various cutting-edge technologies [1][2][3][4][5][6][7]. Among the pantheon of materials, the emergence of two-dimensional (2D) materials has engendered considerable interest, stemming from their characteristic planar structure and the absence of dangling bonds.…”

Machinability of MoS2 after Oxygen Plasma Treatment under Mechanical Scanning Probe Lithography

“…These residues impaired the performance of the fabricated devices [5][6][7]. To address this, post-lithography methods like thermal annealing, solvent rinsing or plasma cleaning were employed to remove resist residues, enhance surface passivation, and improve metal-semiconductor contacts [8][9][10]. It remains challenging to develop techniques that effectively prevent the accumulation of surface residues on 2D material surfaces.…”

Editorial: Focus on electronic and optoelectronic devices made of two-dimensional materials

“…For example, a two-dimensional layered material, molybdenum disulfide (MoS 2 ), exhibits novel semiconductor properties and appears to be a promising candidate material that could meet the expectations of Moore's law. To this end, the paper by Thoutam et al [1] wrote a review on the manufacture of electronic devices based on MoS 2 [2]. The review comprehensively discusses various 'manufacturing challenges' involved in the production of MoS 2 -based electronic devices.…”