Recently, black phosphorus (BP) has joined the two-dimensional material family as a promising candidate for photonic applications due to its moderate bandgap, high carrier mobility, and compatibility with a diverse range of substrates. Photodetectors are probably the most explored BP photonic devices, however, their unique potential compared with other layered materials in the mid-infrared wavelength range has not been revealed. Here, we demonstrate BP mid-infrared detectors at 3.39 μm with high internal gain, resulting in an external responsivity of 82 A/W. Noise measurements show that such BP photodetectors are capable of sensing mid-infrared light in the picowatt range. Moreover, the high photoresponse remains effective at kilohertz modulation frequencies, because of the fast carrier dynamics arising from BP's moderate bandgap. The high photoresponse at mid-infrared wavelengths and the large dynamic bandwidth, together with its unique polarization dependent response induced by low crystalline symmetry, can be coalesced to promise photonic applications such as chip-scale mid-infrared sensing and imaging at low light levels.

Recently, wearable pressure sensors have attracted tremendous attention because of their potential applications in monitoring physiological signals for human healthcare. Sensitivity and linearity are the two most essential parameters for pressure sensors. Although various designed micro/nanostructure morphologies have been introduced, the trade-off between sensitivity and linearity has not been well balanced. Human skin, which contains force receptors in a reticular layer, has a high sensitivity even for large external stimuli. Herein, inspired by the skin epidermis with high-performance force sensing, we have proposed a special surface morphology with spinosum microstructure of random distribution via the combination of an abrasive paper template and reduced graphene oxide. The sensitivity of the graphene pressure sensor with random distribution spinosum (RDS) microstructure is as high as 25.1 kPa in a wide linearity range of 0-2.6 kPa. Our pressure sensor exhibits superior comprehensive properties compared with previous surface-modified pressure sensors. According to simulation and mechanism analyses, the spinosum microstructure and random distribution contribute to the high sensitivity and large linearity range, respectively. In addition, the pressure sensor shows promising potential in detecting human physiological signals, such as heartbeat, respiration, phonation, and human motions of a pushup, arm bending, and walking. The wearable pressure sensor array was further used to detect gait states of supination, neutral, and pronation. The RDS microstructure provides an alternative strategy to improve the performance of pressure sensors and extend their potential applications in monitoring human activities.

Pressure sensors should have an excellent sensitivity in the range of 0-20 kPa when applied in wearable applications. Traditional pressure sensors cannot achieve both a high sensitivity and a large working range simultaneously, which results in their limited applications in wearable fields. There is an urgent need to develop a pressure sensor to make a breakthrough in both sensitivity and working range. In this paper, a graphene-paper pressure sensor that shows excellent performance in the range of 0-20 kPa is proposed. Compared to most reported graphene pressure sensors, this work realizes the optimization of sensitivity and working range, which is especially suitable for wearable applications. We also demonstrate that the pressure sensor can be applied in pulse detection, respiratory detection, voice recognition, as well as various intense motion detections. This graphene-paper pressure sensor will have great potentials for smart wearable devices to achieve health monitoring and motion detection.

Graphene has initiated intensive research efforts on 2D crystalline materials due to its extraordinary set of properties and the resulting host of possible applications. Here the authors report on the controllable large-scale synthesis of C N, a 2D crystalline, hole-free extension of graphene, its structural characterization, and some of its unique properties. C N is fabricated by polymerization of 2,3-diaminophenazine. It consists of a 2D honeycomb lattice with a homogeneous distribution of nitrogen atoms, where both N and C atoms show a D -symmetry. C N is a semiconductor with an indirect bandgap of 0.39 eV that can be tuned to cover the entire visible range by fabrication of quantum dots with different diameters. Back-gated field-effect transistors made of single-layer C N display an on-off current ratio reaching 5.5 × 10 . Surprisingly, C N exhibits a ferromagnetic order at low temperatures (<96 K) when doped with hydrogen. This new member of the graphene family opens the door for both fundamental basic research and possible future applications.