A cross batch characterization of GaN HEMT devices for power electronics applications

Aggas, Jeffrey M.; Jenkins, Luke L.; Wilson, Christopher G.; Moses, Justin D.; Abell, Will; Rhea, Benjamin K.; Dean, Robert N.

doi:10.1109/wipda.2013.6695589

Cited by 6 publications

(1 citation statement)

References 5 publications

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“…However, much larger variations (>10%) of Vth and Rds_on were observed in the cross batch characterization. Similar results are reported for E-mode GaN HEMTs as well [14].…”

Section: B Device Characteristics Variation and Temperature Dependencesupporting

confidence: 88%

Paralleled Operation of High-Voltage Cascode GaN HEMTs

Zhang

Wen

et al. 2016

IEEE J. Emerg. Sel. Topics Power Electron.

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Paralleling devices is an effective way to achieve higher power application while still having the convenience of using discrete devices. However, the mechanisms of potential failures and the circuit design considerations has not been thoroughly studied yet, when paralleling Gallium Nitride High Electron Mobility Transistors (GaN HEMTs) in cascode configuration. This paper presents a comprehensive study on paralleled high voltage cascode GaN HEMTs, evaluating both circuit design and device characteristic. The mechanisms of current oscillation, which occurred during the cascode GaN HEMTs parallel operation, are analyzed in detail. The Q3D tool and SPICE-based simulation model jointly quantify the sensitivity of the circuit parasitic parameters and the cascode GaN HEMTs mismatches during the paralleled operation. General design guidelines are provided in the paper as well. A group of experimental results ultimately validate the analysis toward parallel operation.

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“…However, much larger variations (>10%) of Vth and Rds_on were observed in the cross batch characterization. Similar results are reported for E-mode GaN HEMTs as well [14].…”

Section: B Device Characteristics Variation and Temperature Dependencesupporting

confidence: 88%

Paralleled Operation of High-Voltage Cascode GaN HEMTs

Zhang

Wen

et al. 2016

IEEE J. Emerg. Sel. Topics Power Electron.

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Optimization of a 96% efficient 12–1 V Gallium Nitride based point of load converter

Jenkins

Wilson

Moses

et al. 2014

2014 IEEE Applied Power Electronics Conference and Exposition - APEC 2014

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Reducing losses in the shoot-through state of a single-phase quasi-z-source inverter

Baier

Flores

Díaz

et al. 2017

2017 IEEE International Telecommunications Energy Conference (INTELEC)

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A cross batch characterization of GaN HEMT devices for power electronics applications

Cited by 6 publications

References 5 publications

Paralleled Operation of High-Voltage Cascode GaN HEMTs

Paralleled Operation of High-Voltage Cascode GaN HEMTs

Optimization of a 96% efficient 12–1 V Gallium Nitride based point of load converter

Reducing losses in the shoot-through state of a single-phase quasi-z-source inverter

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A cross batch characterization of GaN HEMT devices for power electronics applications

Cited by 6 publications

References 5 publications

Paralleled Operation of High-Voltage Cascode GaN HEMTs

Paralleled Operation of High-Voltage Cascode GaN HEMTs

Optimization of a 96% efficient 12&#x2013;1 V Gallium Nitride based point of load converter

Reducing losses in the shoot-through state of a single-phase quasi-z-source inverter

Contact Info

Product

Resources

About

Optimization of a 96% efficient 12–1 V Gallium Nitride based point of load converter