A cross section of VLSI reliability-hot carriers, dielectrics and metallization

Takeda, Eiji

doi:10.1088/0268-1242/9/5/001

Cited by 5 publications

(3 citation statements)

References 69 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…In addition, an increase in trap assisted tunneling in thin (2.5 nm) results from reduced trap activation energy due to both compressive and tensile stress [25]. Uniaxial mechanical stress may change the trap energy levels by changing bond lengths and angles in and [26], [27]. This is consistent with previous works on the oxygen vacancy defect that show that the trap microstructure and energy levels can be changed by stretching the Si-Si bonds and/or changing the bond angles [28]- [31].…”

Section: A Radiation Induced Threshold Voltage Shifts Under Mechanicmentioning

confidence: 99%

Total Ionizing Dose Effects on Strained ${\rm HfO}_{2}$-Based nMOSFETs

Park

Dixit

Choi

et al. 2008

IEEE Trans. Nucl. Sci.

View full text Add to dashboard Cite

Radiation-induced charge trapping and mobility degradation are measured on uniaxially stressed HfO 2 -based nMOSFETs. Controlled external mechanical stress is applied via a four-point bending jig while the samples are irradiated using 10-keV X-rays. Positive charge trapping is observed for unstressed devices, and for devices irradiated under both compressive and tensile stress. Reduced trapped charge is measured as the uniaxial stress level increases. These results suggest that the increased stress leads to a reconfiguration of defect microstructure, as compared to the unstressed devices. The reconfiguration consists of changes in bond lengths and angles and a corresponding change in trap energy levels, which can (1) reduce the probability that a defect can capture holes, (2) increase the probability for electron and trapped-hole recombination, and/or (3) increase the mobility of the transporting holes in the oxides of the devices that are irradiated under stress. These results show that increased mechanical stress in high-k dielectrics does not degrade their radiation hardness. We also observe that the post-irradiation channel mobility degrades less in uniaxially stressed devices than unstressed devices.Index Terms-Hafnium oxide (HfO 2 ), high-k, metal-oxidesemiconductor-field-effect-transistors (MOSFETs), radiation damage, strained-silicon, uniaxial, X-ray.

show abstract

Section: A Radiation Induced Threshold Voltage Shifts Under Mechanicmentioning

confidence: 99%

Total Ionizing Dose Effects on Strained ${\rm HfO}_{2}$-Based nMOSFETs

Park

Dixit

Choi

et al. 2008

IEEE Trans. Nucl. Sci.

View full text Add to dashboard Cite

show abstract

“…A degradation model is proposed for reliability of CMOS OTA. As a second step, to demonstrate that the model proposed is independent of the realization technology, the circuit is also investigated by SPICE simulations using the observation based hot-carrier degradation models for MOS transistors available in the literature [11] where a different CMOS technology is used for realization.…”

Section: Cmosmentioning

confidence: 99%

“…Result is shown in Fig.5. where A and n are empirical model parameters [11]. can be specified as a = 0.00890558 and b = 5.41608.…”

Section: Measurementsmentioning

confidence: 99%

On The Reliability of Symmetrical CMOS OTA Operating in Subthreshold Region

Özçelep

Kuntman

MELECON 2006 - 2006 IEEE Mediterranean Electrotechnical Conference

View full text Add to dashboard Cite

CMOS circuits such as OTAs (operational transconductance amplifiers) operating in the subthreshold (weak inversion) region introduce a versatile solution for the realization of low-power VLSI building blocks. In this paper, hot carrier induced degradation of electrical parameters of CMOS OTAs operating in subthreshold region is investigated by accelerated laboratory measurements. Using the experimental observations a degradation model is proposed for reliability of CMOS OTA. The advantages provided by the degradation model proposed is demonstrated by experiments on design examples of first and second order OTA-C filters. The estimated results are found in good agreement with experiments. The model proposed provides to the IC designer new possibilities to estimate the reliability of OTA-C based topologies operating in subthreshold region.

show abstract

Microscopic characterization of hot-electron spreading and trapping in SiO2 films using ballistic electron emission microscopy

Kaczer

Pelz

et al. 1998

Applied Physics Letters

View full text Add to dashboard Cite

Ballistic electron emission microscopy was used to study three-dimensional spreading and trapping of charge in buried, 10 nm thick SiO2 films following hot-electron injection at one location. The trapped charge was found to be distributed approximately uniformly across the thickness of the oxide, and spread laterally ∼50 nm, much more than the oxide film thickness. This large spreading can be explained by a combination of strong hot electron scattering and strong suppression in trapping efficiency at higher injected electron dose.

show abstract

A cross section of VLSI reliability-hot carriers, dielectrics and metallization

Cited by 5 publications

References 69 publications

Total Ionizing Dose Effects on Strained ${\rm HfO}_{2}$-Based nMOSFETs

Total Ionizing Dose Effects on Strained ${\rm HfO}_{2}$-Based nMOSFETs

On The Reliability of Symmetrical CMOS OTA Operating in Subthreshold Region

Microscopic characterization of hot-electron spreading and trapping in SiO2 films using ballistic electron emission microscopy

Contact Info

Product

Resources

About