A cryogenically-cooled wide-band HEMT MMIC low-noise amplifier

A Cryogenic Broadband Sub-1-dB NF CMOS Low Noise Amplifier for Quantum Applications

“…Assuming Q n = 50 and X = Q n , which means the frequency separation is the same as the readout bandwidth, the LNA bandwidth required for 20 qubits is calculated as ∼3. 6 GHz with adequate design margin to surmount the parameters' deviation due to temperature and process variation. When time-multiplexing is also applied [20], [26], >100 qubit readout can be achieved.…”

“…the noise contribution of M 2 will be nulled. On the other hand, L P cannot be set too large since it also decreases Re{Z in } according to (6), which further enlarges the discrepancy of Z * in and Z opt of M 1 . The layout parasitic extraction shows C P + C N ∼ = 195 fF and C gs2 ∼ = 95 fF.…”

“…The cryogenic low noise amplifier (cryo-LNA) is a critical block in the qubit readout chain since it is the first block that magnifies the weak quantum information signals from the qubits. RF cryo-LNAs were mainly implemented using III-V devices [6], [7] or silicon-germanium (SiGe) HBTs [8] for a long time because of their superior cryogenic RF characteristics. Recently, it was verified in [2] that deep-sub-micrometer CMOS transistors work well at deep cryogenic temperature, thus providing an indication that cryo-circuit blocks can be designed to reach fully integrated readout and control for quantum processors in standard CMOS technology.…”

Design and Fabrication of Cryogenic Low Noise Amplifier in Low RL band

“…EXPERIMENTAL AND DISCUSSION At cryogenic temperature, the high electron mobility transistor (HEMT) exhibits higher transconductance (Gm) and faster transit time (x), resulting in higher gain and cutoff frequency, which are caused by the magnitude and phase deviations of scattering parameters in the transistor with temperature [9][10][11]. Because the scattering parameters of the transistor supplied by manufacturer are measured at the room temperature, we have to adjust the matching circuit at the low temperature to correct the deviation between design and measurement.…”

2-GHz band cryogenically-cooled GaN HEMT amplifier for mobile base station receivers

“…It is therefore indispensable to investigate the fundamental characteristics of the GaN HEMT in a cryogenic operation environment in order to apply it to the CLNA. Although GaAs HEMT-or GaAs FET-based CLNA were previously reported [7]- [9], this paper is the first to present the performance of a 2-GHz band GaN HEMT amplifier that is cryogenically cooled to 60 K. Figure 1 shows the basic CRFE configuration. In this figure, a modified duplexer is inserted in front of the HTSF.…”