A Current–Voltage Model for Double Schottky Barrier Devices

Abstract

Schottky barriers (SBs) are often formed at the semiconductor/metal contacts and affect the electrical behavior of semiconductor devices. In particular, SBs are playing a major role in the investigation of the electrical properties of mono and 2D nanostructured materials, although their impact on the current–voltage characteristics is frequently neglected or misunderstood. In this work, a single equation is proposed to describe the current–voltage characteristics of two‐terminal semiconductor devices with Schottky contacts. The equation is applied to numerically simulate the electrical behavior for both ideal and nonideal SBs. The proposed model can be used to directly estimate the SB height and the ideality factor. It is applied to perfectly reproduce the experimental current–voltage characteristics of ultrathin molybdenum disulfide or tungsten diselenide nanosheets and tungsten disulfide nanotubes. The model constitutes a useful tool for the analysis and the extraction of relevant transport parameters in any two‐terminal device with Schottky contacts.

Electric Transport in Few-Layer ReSe2 Transistors Modulated by Air Pressure and Light

“…This behavior is typical of a n-type transistor [ 21 , 22 ]. Furthermore, for all gate voltages, the curves are asymmetric, with slightly higher current at positive , pointing to the formation of low Schottky barriers at the ReSe 2 /Cr/Au contacts [ 23 , 24 , 25 , 26 ]. The presence of a Schottky barrier is confirmed also by the limited current that reaches the maximum of 20 nA at .…”

Scalable Submicron Channel Fabrication by Suspended Nanofiber Lithography for Short‐Channel Field‐Effect Transistors

“…The slight nonlinear but almost symmetric behavior at |V ds | < 1 V (Figure S13, Supporting Information) demonstrates Schottky-type contacts with similar barrier heights at the source and drain Cr/Au electrodes. [39] The MoS 2 -Au interfaces are reported to have a contact resistance of ≈1-10 kΩ µm −1 , [40] therefore, the calculated mobility is underestimated. The electrical performance of MoS 2 FETs is expected to be significantly improved when the Schottky barrier height can be lowered by other suitable ohmic-type contacts.…”

In operando charge transport imaging of atomically thin dopant nanostructures in silicon

“…3a) following ref. 30 and comparing it to the measured device IV. The best estimation is obtained by only including small deviations to the ideal case and assuming an approximately symmetric barrier height of ∼0.79 V for both contact sides (details can be found in the section 'Model the IV characteristic of the P-wire device' in the ESI †).…”