A DDS-oriented phase-to-amplitude converter using a SiGe:C bipolar transistors differential pair

Thuries, S.; Tournier, E.

doi:10.1109/rfit.2005.1598913

Cited by 6 publications

(4 citation statements)

References 8 publications

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“…The initial purpose was also to lower the consumption. The first successful measured implementation of an AS-PAC on a BiCMOS SiGe:C 0.25 µm technology was first conducted by Thuries et al (author's papers) in [69] for the standalone AS-PAC, and [70] for a full DDFS at 6 GHz. Between the two, McEwan et al also published a complete DDFS in CMOS 0.35 µm but with a very limited frequency of 10 MHz [71].…”

Section: Radio Frequency Ddfssmentioning

confidence: 99%

Evolution Trends and Paradigms of Low Noise Frequency Synthesis and Signal Conversion Using Silicon Technologies

2022

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Silicon technologies for HF applications have been proven for more than two decades, and technologies have greatly evolved. Whether CMOS or BiCMOS technologies, the unique combination of radio frequency, baseband, and digital functions allow a very high level of integration. While it is possible to achieve fully integrated transceivers, the major advantages of these silicon technologies lie mainly in their unparalleled performance in the field of frequency synthesis and frequency conversion. We propose in this paper a review of the major results obtained on these RF components since the beginning of the 2000s, also considering the impact of the technology node. The back-end of line (BEOL) process on which depends the quality of microwave monolithic integrated circuits (MMICs) is briefly presented in the introductory part. If circuit performances are tightly bound to the active devices (i.e., the heterojunction bipolar transistor SiGe HBT or CMOS transistor), passive elements (i.e., quality factor of inductors and varactors, losses of transmission, or interconnection lines) as well as the definition of the substrate also play a major role. The core of the article is oriented toward the noise of synthesized signals and frequency conversion. Frequency synthesis is presented through the analog design of a voltage-controlled oscillator (VCO) or through the direct digital frequency synthesis (DDFS), for which respective figures of merit are presented and discussed in a second section. The spectral purity of the oscillators being decisive in the definition of the throughput of a link is approached through the comparison of different figures of merit (FoM) for a set of circuits achievements over the selected period. If the realization of free oscillators is closely bound to the phase-locked loop (PLL)-type control loop for VCOs, the DDFS solution provides more direct and more flexible alternative at first sight. Therefore, these two solutions are analyzed collectively. Finally, the oscillator integrated in the transmitter or receiver supplies the needed LO (local oscillator) power to the frequency mixer in the frequency conversion module: henceforth, the third part of this study focuses on high-frequency mixer realizations. We thus consider this LO power in some advanced figure of merit mentioned in the second section. The design trade-off of the mixer is presented in an approach combining LO (conversion gain, channel isolation, and phase noise) and RF (HF noise figure and channel isolation) constraints. The final section provides a summary of the results and trends mentioned in the paper.

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Section: Radio Frequency Ddfssmentioning

confidence: 99%

Evolution Trends and Paradigms of Low Noise Frequency Synthesis and Signal Conversion Using Silicon Technologies

2022

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“…The proposed DDS 9-bits architecture is based on the idea that the non-linear transfer function of a bipolar differential pair can be pertinently used in order to convert a triangle wave into a sine wave [2], [3]. The DDS resultant architecture is shown in Fig.…”

Section: A Bipolar Differential Pair Phase-to-amplitude Convertermentioning

confidence: 99%

A 6-GHz Low-Power BiCMOS SiGe:C 0.25 $\mu$m Direct Digital Synthesizer

Thuries

Tournier

Cathelin

et al. 2008

IEEE Microw. Wireless Compon. Lett.

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A 6-GHz low power SiGe direct digital synthesizer (DDS) is reported. This paper discusses the BiCMOS design improvements used for the phase accumulator and the phase-toamplitude conversion in order to achieve higher speed operation and lower power consumption compared to existing DDS. The phase accumulator is based on a three-level BiCMOS logic, and the phase-to-amplitude conversion is completed through a bipolar differential pair. The circuit has been processed in a BiCMOS SiGe:C 0.25 µm technology. The power consumption is 308 mW and it operates from a 2.8 V supply. The chip core area is 1 mm 2 .

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“…12. From a linear driving, an output signal shape close to a sinus is then achieved, Simplified analog phase/amplitude converter which spectral quality can be optimized adjusting the input voltage excursion [22]. Consequently, the phase accumulator becomes the speed limiting element.…”

Section: High-speed Digital Circuitsmentioning

confidence: 99%

Silicon technologies for applications up to millimetre-waves: Some design guidelines

Viallon

Tournier

Parra

2006

Analog Integr Circ Sig Process

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This paper presents some guidelines for the design of silicon circuits, which are able to achieve state of the art performances in the microwave frequency range despite their integration with a standard technology. Firstly, we point out the benefits which may be expected from the large number of available metallic layers, and which make possible the implementation of highly integrated and low loss interconnects and passives. Next, we emphasize the advantages of microwave differential structures: without any increase of the circuit complexity, a very well balanced behaviour can be reached leading to a strong attenuation of common mode parasitic signals. Finally, the interest and the feasibility of mixed-mode circuits (analog with digital) are demonstrated through dedicated designs for microwave frequency synthesis.

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A DDS-oriented phase-to-amplitude converter using a SiGe:C bipolar transistors differential pair

Cited by 6 publications

References 8 publications

Evolution Trends and Paradigms of Low Noise Frequency Synthesis and Signal Conversion Using Silicon Technologies

Evolution Trends and Paradigms of Low Noise Frequency Synthesis and Signal Conversion Using Silicon Technologies

A 6-GHz Low-Power BiCMOS SiGe:C 0.25 $\mu$m Direct Digital Synthesizer

Silicon technologies for applications up to millimetre-waves: Some design guidelines

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