A de‐embedding method with matrix rectification and influences of residual errors on model parameters extraction of InP HEMTs

Abstract

As the cutoff frequency of InP HEMTs enters the terahertz band, high frequency measurement and modeling techniques in hundreds of gigahertz become urgent needs for further millimeter monolithic integrated circuits design. We proposed a new de‐embedding method linking device measurements and modeling based on full EM simulation data acquired from HFSS and advanced design system (ADS). The simulation results for passive dummy structures are well consistent with experiments, and the de‐embedding method is proved very effective for a resistive passive device with high distributed embedding surroundings in frequency range below 40 GHz. Based on these experimental facts, the EM simulations were extended up to 300 GHz and corresponding de‐embedding deviation was further investigated. Results show that the proposed de‐embedding method has very high accuracy in the whole frequency region with a maximum S‐parameters deviation of only 2.58%. However, further analysis proves that the small residual errors still significantly affect extracted small signal model parameters of InP HEMTs especially for transit time τ. Thus, further improvements on de‐embedding accuracy or careful considerations of more error functions in modeling process are necessary for obtaining physically meaningful model parameters.

Extrinsic equivalent circuit modeling of InP HEMTs based on full-wave electromagnetic simulation

“…[1][2][3] And the high-frequency InP HEMT has been designed and manufactured into sub-millimeter monolithic integrated circuits (MMIC). [4][5][6] However, as the operating frequency of the device continues to increase, the device exhibits a distributed behavior, and the parasitic resistance, capacitance, and inductance of the metal plating layer interconnected with the device make the performance of the device degrade significantly. [7] Moreover, the conventional device models can no longer characterize the basic physical principles of device performance degradation.…”

Development of a 0.15 μm GaAs pHEMT Process Design Kit for Low-Noise Applications

“…The fundamentals of modeling semiconductor devices and integrated circuits are described in books [4][5][6][7][8]. Some of the applied techniques can be found in [9][10][11][12][13][14][15][16][17][18][19][20][21][22]. This article discusses the methodology, techniques, and procedure used for PDK development.…”