2021 International Workshop on Advanced Patterning Solutions (IWAPS) 2021
DOI: 10.1109/iwaps54037.2021.9671061
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A Design-Oriented Approach to Implement Inverse Lithography Technology OPC in Silicon Photonics MPW Platform

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Cited by 2 publications
(2 citation statements)
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“…The principle is that the OPE sacrifices the added pattern to obtain the desired pattern in the design. Image resolution can be improved using optical proximity effect correction [ 13 ]. By changing the image of the photomask, the pattern on the photoresist can be aligned with the design.…”
Section: Optical Proximity Effect Correction (Opc)mentioning
confidence: 99%
See 1 more Smart Citation
“…The principle is that the OPE sacrifices the added pattern to obtain the desired pattern in the design. Image resolution can be improved using optical proximity effect correction [ 13 ]. By changing the image of the photomask, the pattern on the photoresist can be aligned with the design.…”
Section: Optical Proximity Effect Correction (Opc)mentioning
confidence: 99%
“…The dummy finger between the electrode and the bus bar creates an electrode gap. Although a narrow electrode gap (a narrow gap means that it is close to the light source wavelength of the lithograph or less than it) can help suppress the lateral leakage of SAW [ 2 , 9 , 10 ], it can also cause significant OPE during the lithography process [ 11 , 12 , 13 ]. Hence, for SAW resonators, OPE will cause edge rounding and inward shrinkage of the electrodes and dummy electrodes on both sides of the electrode gaps, which can reduce the effectiveness of transverse SAW leakage suppression.…”
Section: Introductionmentioning
confidence: 99%