A detailed study of the gate/drain voltage dependence of RTN in bulk pMOS transistors

Saraza-Canflanca, P.; Martín-Martínez, J.; Castro-López, R.; Roca, E.; Rodrı́guez, R.; Nafría, M.; Fernández, Francisco V.

doi:10.1016/j.mee.2019.111004

Cited by 12 publications

(12 citation statements)

References 7 publications

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“…The absolute values have been used for the voltages so that they take positive values for both nMOS and pMOS. This model is common in the literature and fits well with the experimental measurements [15]. There is also general agreement that 𝛽 is positive and 𝛽 is negative, i.e., the emission times increase with |𝑉 | while the capture times decrease [15].…”

Section: Probability Of Occupationsupporting

confidence: 83%

“…This model is common in the literature and fits well with the experimental measurements [15]. There is also general agreement that 𝛽 is positive and 𝛽 is negative, i.e., the emission times increase with |𝑉 | while the capture times decrease [15]. For the sake of illustration, let us analyze what (4) means for a given defect when |𝑉 | is varied while |𝑉 | is kept constant.…”

Section: Probability Of Occupationsupporting

confidence: 68%

See 1 more Smart Citation

On the Impact of the Biasing History on the Characterization of Random Telegraph Noise

Saraza-Canflanca

Castro-López

Roca

et al. 2022

IEEE Trans. Instrum. Meas.

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Random Telegraph Noise is a time-dependent variability phenomenon that has gained increased attention during the last years, especially in deeply-scaled technologies. In particular, there is a wide variety of works presenting different techniques designed to analyze current traces in scaled FET devices displaying Random Telegraph Noise, and others focused on modeling the phenomenon using the parameters extracted through such techniques. However, very little attention has been paid to the effects that the biasing conditions of the transistors prior to the measurements may have on the extraction of the parameters that characterize this phenomenon. This paper investigates how these biasing conditions actually impact the extracted results. Specifically, it is demonstrated that the results obtained when Random Telegraph Noise is measured immediately after the device is biased may lead to an overestimation of the Random Telegraph Noise impact with respect to situations in which the device has been previously biased for some time. This fact is, first, presented from a theoretical point of view, and, after, demonstrated experimentally through measurements obtained from a CMOS-transistor array.

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Section: Probability Of Occupationsupporting

confidence: 83%

Section: Probability Of Occupationsupporting

confidence: 68%

On the Impact of the Biasing History on the Characterization of Random Telegraph Noise

Saraza-Canflanca

Castro-López

Roca

et al. 2022

IEEE Trans. Instrum. Meas.

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“…Such a dependence was also found in [ 110 ] for the above-threshold region, and ascribed to the effect of traps at the silicon-oxide interfaces. These dependences reflect similar behaviors observed both experimentally and numerically in planar or cylindrical devices [ 111 , 112 , 113 ], where the increased screening exerted by the mobile carriers as the gate bias is raised, mitigating the effect of the RTN trap, was invoked as an explanation. Several works reported investigations of the capture and emission time constants and their dependence on gate bias and temperature, including the activation energies [ 114 , 115 , 116 , 117 ].…”

Section: Experimental Datasupporting

confidence: 81%

Random Telegraph Noise in 3D NAND Flash Memories

et al. 2021

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In this paper, we review the phenomenology of random telegraph noise (RTN) in 3D NAND Flash arrays. The main features of such arrays resulting from their mainstream integration scheme are first discussed, pointing out the relevant role played by the polycrystalline nature of the string silicon channels on current transport. Starting from that, experimental data for RTN in 3D arrays are presented and explained via theoretical and simulation models. The attention is drawn, in particular, to the changes in the RTN dependences on the array working conditions that resulted from the transition from planar to 3D architectures. Such changes are explained by considering the impact of highly-defective grain boundaries on percolative current transport in cell channels in combination with the localized nature of the RTN traps.

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“…2a for the set of model parameter values obtained in Section IV and indicated in Table II. Note also that time constants depend on the applied gate and drain biasing voltages [18]. The following exponential dependencies on the gate and drain voltages are assumed (with source and bulk short-circuited):…”

Section: A Requirement 1: the Defect Exists And Is Occupied At The St...mentioning

confidence: 99%

Determination of the Time Constant Distribution of a Defect-Centric Time-Dependent Variability Model for Sub-100-nm FETs

Saraza-Canflanca

Castro-López

Roca

et al. 2022

IEEE Trans. Electron Devices

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The origin of some Time-Dependent Variability phenomena in FET technologies has been attributed to the charge carrier trapping/de-trapping activity of individual defects present in devices. Although some models have been presented to describe these phenomena from a socalled defect-centric perspective, limited attention has been paid to the complex process that goes from the experimental data of the phenomena up to the final construction of the model and all its components, specifically the one that pertains to the time constant distribution. This paper presents a detailed strategy aimed at determining the defect time constant distribution, specifically tailored for small area devices, using data obtained from conventional characterization procedures.

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A detailed study of the gate/drain voltage dependence of RTN in bulk pMOS transistors

Cited by 12 publications

References 7 publications

On the Impact of the Biasing History on the Characterization of Random Telegraph Noise

On the Impact of the Biasing History on the Characterization of Random Telegraph Noise

Random Telegraph Noise in 3D NAND Flash Memories

Determination of the Time Constant Distribution of a Defect-Centric Time-Dependent Variability Model for Sub-100-nm FETs

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