A device model framework for magnetoresistive sensors based on the Stoner–Wohlfarth model

Bruckner, Florian; Bergmair, Bernhard; Brueckl, Hubert; Palmesi, Pietro; Buder, Anton; Satz, Armin; Suess, Dieter

doi:10.1016/j.jmmm.2015.01.009

Cited by 7 publications

(1 citation statement)

References 19 publications

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“…Here we assume that the Stoner-Wohlfarth (SW) model [ 28 , 35 ], which often is used to describe the processes occurring in SV, is also valid for the magnetic film. The model allows us to evaluate the reorientation of the magnetization of the anisotropic particle under the influence of an applied field.…”

Section: Methodsmentioning

confidence: 99%

Clusters of Spin Valve Sensors in 3D Magnetic Field of a Label

Babaytsev

Чеченин

Dzhun

et al. 2021

Sensors

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Magnetic field sensors based on the giant magnetoresistance (GMR) effect have a number of practical current and future applications. We report on a modeling of the magnetoresistive response of moving spin-valve (SV) GMR sensors combined in certain cluster networks to an inhomogeneous magnetic field of a label. We predicted a large variety of sensor responses dependent on the number of sensors in the cluster, their types of interconnections, the orientation of the cluster, and the trajectory of sensor motion relative to the label. The model included a specific shape of the label, producing an inhomogeneous magnetic field. The results can be used for the optimal design of positioning devices.

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Section: Methodsmentioning

confidence: 99%

Clusters of Spin Valve Sensors in 3D Magnetic Field of a Label

Babaytsev

Чеченин

Dzhun

et al. 2021

Sensors

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Angle-dependent switching in a magnetic tunnel junction containing a synthetic antiferromagnet

Chen

Parks

Zhang

et al. 2022

Applied Physics Letters

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The angle dependence of field-induced switching was investigated in magnetic tunnel junctions with in-plane magnetization and a pinned synthetic antiferromagnet reference layer. The 60 × 90 nm2 elliptical nanopillars had sharp single switches when the field was applied along the major axis of the ellipse, but even with small (20°) deviations, reversal occurred through an intermediate state. The results are interpreted with a model that includes the external applied field and the effective fields due to shape anisotropy and the fringe field of the synthetic antiferromagnet and used to extract the magnetization direction at various points in the magnetoresistance loop. The implications for faster spintronic probabilistic computing devices are discussed.

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GMR effect in nonhomogeneous magnetic field

Babaitsev

Чеченин

Dzhun

et al. 2019

J. Phys.: Conf. Ser.

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Magnetic field sensors, based on giant magnetoresistance (GMR) effect, have a wide range of practical implementations. One of them is the use as a positioning device in different kind of actuators. Here we report on modelling of magnetoresistivity response of spin-valve (SV) based GMR structure in a various geometry of SV positioning with respect to a magnetic reference label. The model includes the magnetic label of a certain shape producing a nonhomogeneous magnetic field in 3D space and moving along a straight line in front of SV device. Different mutual label-SV positioning is considered. The reaction of micromagnetic configuration in the ferromagnetic layers and corresponding magnetoresistive effect of the SV is calculated and analyzed.

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A device model framework for magnetoresistive sensors based on the Stoner–Wohlfarth model

Cited by 7 publications

References 19 publications

Clusters of Spin Valve Sensors in 3D Magnetic Field of a Label

Clusters of Spin Valve Sensors in 3D Magnetic Field of a Label

Angle-dependent switching in a magnetic tunnel junction containing a synthetic antiferromagnet

GMR effect in nonhomogeneous magnetic field

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