A different approach to solar cell simulation

Kavasoğlu, Neşe; Kavasoğlu, A. Sertap; Metin, Bengül

doi:10.1016/j.materresbull.2015.06.007

Cited by 8 publications

(3 citation statements)

References 24 publications

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“…This function is derived from the thermionic current expression given in equation (1 The voltage dependence of the BH in the MIS diodes, that is, the barrier increase with increasing forward bias voltage in the forward bias I -V measurements comes from the potential change across the interfacial layer rather than from image force lowering. The potential drop across the HfO 2 interfacial layer varies with bias due to the electrical field present in the semiconductor and the change in the interface state charge as a result of the applied voltage, and thus modifies the BH [6][7][8][9][10][11][12][13][14][40][41][42][43][44][45][46][47][48][49][50][51][52][53][54]. As mentioned by Budhraja et al [22,23], the interface Table 2.…”

Section: Resultsmentioning

confidence: 99%

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Barrier height modification in Au/Ti/n-GaAs devices with a $$\hbox {HfO}_{2}$$ HfO 2 interfacial layer formed by atomic layer deposition

Karabulut

2019

Bull Mater Sci

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X-ray photoelectron spectroscopy has been carried out to characterize the surface of the hafnia (HfO 2) thin films grown on n-GaAs wafer by atomic layer deposition, and the surface morphology of the HfO 2 layer on GaAs has been analysed using atomic force microscopy. The barrier height (BH) values of 1.03 and 0.93 eV (300 K) for the Au/Ti/HfO 2 /n-GaAs structures with 3-and 5-nm HfO 2 interfacial layers, respectively, have been obtained from the I-V characteristics of the devices, which are higher than the value of 0.77 eV (300 K) for the Au/Ti/n-GaAs diode fabricated by us. Therefore, it can be said that the HfO 2 thin layer at the metal/GaAs interface can also be used for BH modification as a gate insulator in GaAs metal-oxide semiconductor (MOS) capacitors and MOS field-effect transistors. The ideality factor values have been calculated as 1.028 and 2.72 eV at 400 and 60 K; and as 1.04 and 2.58 eV at 400 and 60 K for the metal-insulating layer-semiconductor (MIS) devices with 3-and 5-nm interfacial layers, respectively. The bias-dependent BH values have been calculated for the devices by both Norde's method and Gaussian distribution (GD) of BHs at each sample temperature. At 320 K, the b (V) value at 0.70 V for a 3-nm MIS diode is about 1.08 eV from the b (V) vs. V curve determined by the GD, and about 0.99 eV at 0.58 V for a 5-nm MIS diode. It has been seen that these bias-dependent BH values are in close agreement with those obtained by Norde's method for the same bias voltage values.

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Section: Resultsmentioning

confidence: 99%

“…According to the potential fluctuation model [40][41][42][43][44][45][46][47][48][49][50][51][52][53][54][55] which is related to thermionic emission over a GD of Schottky barriers, the temperature dependence expressions of the ideality factor and BH are given by [41][42][43] 1…”

Section: Resultsmentioning

confidence: 99%

Barrier height modification in Au/Ti/n-GaAs devices with a $$\hbox {HfO}_{2}$$ HfO 2 interfacial layer formed by atomic layer deposition

Karabulut

2019

Bull Mater Sci

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“…[108] and [60,65]. Recently, Kavasoglu et al [117] have evaluated the variations of SBH by using GD, and have obtained total current by performing numerical integration taking contributions from each elementary diode. They have studied the random multidiode model for Au/n -GaN device, and have assumed the device to have spatially inhomogeneous barrier height, and have considered that the changes in barrier heights of elementary diodes distribute as random, and have argued that this kind of distribution can be a more realistic approximation to real Schottky contact because it is probable that random distribution of BHs of elementary diodes becomes around the mean value within the distribution limits.…”

Section: Introductionmentioning

confidence: 99%

Oncurrent-voltage and capacitance-voltage characteristics of metal-semiconductor contacts

Türüt¹

2020

Turk J Phys

100

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It is expected the fact that the current following across metal-semiconductor (MS) rectifying contact named as Schottky barrier diode (SBDs) and effect of sample temperature on their electrical properties obey thermionic emission (TE) current model. But, it has been seen that the abnormal behaviors in the measured electrical characteristics cannot be exactly understood by the classical TE transport theory. In the literature, the observed abnormal behaviors have been successfully explained by a Gaussian distribution function and by the pinch-off model being interaction of the neighbor patches suggested by Tung and coworkers, the named discrete regions model as "patches" with low barrier placed in a higher uniform barrier area.

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Discrepancies in barrier heights obtained from current–voltage (IV) and capacitance–voltage (CV) of Au/PNoMPhPPy/n-GaAs structures in wide range of temperature

Altındal

Özdemir

Aydoğan

et al. 2022

J Mater Sci: Mater Electron

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A different approach to solar cell simulation

Cited by 8 publications

References 24 publications

Barrier height modification in Au/Ti/n-GaAs devices with a $$\hbox {HfO}_{2}$$ HfO 2 interfacial layer formed by atomic layer deposition

Barrier height modification in Au/Ti/n-GaAs devices with a $$\hbox {HfO}_{2}$$ HfO 2 interfacial layer formed by atomic layer deposition

Oncurrent-voltage and capacitance-voltage characteristics of metal-semiconductor contacts

Discrepancies in barrier heights obtained from current–voltage (IV) and capacitance–voltage (CV) of Au/PNoMPhPPy/n-GaAs structures in wide range of temperature

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