A Direct Epitaxial Approach To Achieving Ultrasmall and Ultrabright InGaN Micro Light-Emitting Diodes (μLEDs)

Bai, J.; Cai, Yuanjing; Feng, Peng; Fletcher, Peter; Zhao, Xuanming; Zhu, Chenqi; Wang, Tao

doi:10.1021/acsphotonics.9b01351

Cited by 51 publications

(51 citation statements)

References 21 publications

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“…It should be noted that the SWCNT films serve as electrical contacts (i.e., transparent electrodes) and are not directly involved in the radiative process occurring in InGaN/GaN MQWs in MWs. Therefore, we consider the SWCNT film wrinkle cavity effect [47] on stretchable LED performance to be negligible. Indeed, in the case of stretchable LED geometry, the light emission is extracted at MW top parts protruding the SWCNT film layer, so the light interaction with SWCNTs is expected to be insignificant due to the film transparency.…”

Section: Synthesis and Application Of Swcnt Contactsmentioning

confidence: 99%

Stretchable Transparent Light-Emitting Diodes Based on InGaN/GaN Quantum Well Microwires and Carbon Nanotube Films

Kochetkov¹,

Neplokh

Mastalieva³

et al. 2021

Nanomaterials

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We propose and demonstrate both flexible and stretchable blue light-emitting diodes based on core/shell InGaN/GaN quantum well microwires embedded in polydimethylsiloxane membranes with strain-insensitive transparent electrodes involving single-walled carbon nanotubes. InGaN/GaN core-shell microwires were grown by metal-organic vapor phase epitaxy, encapsulated into a polydimethylsiloxane film, and then released from the growth substrate. The fabricated free-standing membrane of light-emitting diodes with contacts of single-walled carbon nanotube films can stand up to 20% stretching while maintaining efficient operation. Membrane-based LEDs show less than 15% degradation of electroluminescence intensity after 20 cycles of stretching thus opening an avenue for highly deformable inorganic devices.

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Section: Synthesis and Application Of Swcnt Contactsmentioning

confidence: 99%

Stretchable Transparent Light-Emitting Diodes Based on InGaN/GaN Quantum Well Microwires and Carbon Nanotube Films

Kochetkov¹,

Neplokh

Mastalieva³

et al. 2021

Nanomaterials

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“…For this reason, the present work focuses on the design strategies for GaN nanoLED arrays, as it has been found experimentally that nitride nanorod LEDs emit light down to diameters of roughly 100 nm [9,10,11,12]. As for now, working µLED-based displays with pixel sizes down to 3.6 µm and array dimensions of roughly 500 x 500 have been reported [13,14,15]. However, many of the results presented in the literature are settled in the region of 5 up to 100 µm [16,13,14,17], and concentrate rather on superior driving and emission characteristics than on further miniaturization of the pixel size.…”

Section: Introductionmentioning

confidence: 99%

Optical design of InGaN/GaN nanoLED arrays on a chip: toward: highly resolved illumination

et al. 2020

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The physical laws of diffraction limit the spatial resolution of optical systems. In contrary to most superresolution microscopy approaches used today, in our novel idea we are aiming to overcome this limit by developing a spatially resolved illumination source based on semiconductor nanoscale Light Emitting Diode (nanoLED) arrays with individual pixel control. We present and discuss the results of optical simulations performed for such nanoLED emitter arrays and analyze the theoretical limits of this approach. As possible designs we study arrays of GaN nanofins and nanorods (obtained by etching nanofin arrays), with InGaN/GaN multi quantum wells embedded as active regions. We find that a suitable choice of the array dimensions leads to a reasonably directed light output and concentration of the optical power in the near field around an activated pixel. As a consequence, the spatial resolution for this type of microscopy should only be limited by the pixel pitch, and no longer by the optical diffraction. Realization of optimized nanoLED arrays has a potential to open new field of chip based superresolution microscopy, making super-high spatial resolution ubiquitously available.

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“…At a low current density of 1 A cm −2 , the EQEs of these LEDs are typically ten times lower than their peak EQEs. [ 16–25 ] Therefore, improving the efficiency under small injection below 1 A cm −2 is an urgent need in micro‐LED displays.…”

Section: Introductionmentioning

confidence: 99%

Green InGaN Quantum Dots Breaking through Efficiency and Bandwidth Bottlenecks of Micro‐LEDs

Wang

Chen

et al. 2021

Laser & Photonics Reviews

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Micro‐LEDs are regarded as ideal light sources for next‐generation display and high‐speed visible‐light communication (VLC). However, the conventional micro‐LEDs based on InGaN quantum well (QW) active region suffer from a low efficiency under small injection (below 1 A cm−2) due to the size‐dependent effect and a limited 3 dB bandwidth (hundreds of MHz) due to quantum‐confined Stark effect. Here, InGaN quantum dots (QDs) are proposed as the active region of micro‐LEDs to address these challenges for their strong localization and low‐strain features. Green InGaN QDs are self‐assembled under Stranski–Krastanov (SK) and Volmer–Weber (VW) modes by using metal organic vapor phase epitaxy. The SK QDs can shift the peak efficiency of a micro‐LED to an extremely low current density of 0.5 A cm−2 (almost two orders of magnitude lower compared to QW ones) with an external quantum efficiency of 18.2% (nearly two times higher than present green micro‐LEDs). Besides, green micro‐LEDs based on VW QDs reach a 3 dB bandwidth of 1.3 GHz. These results indicate that InGaN QDs can provide an ultimate solution to micro‐LEDs for display and VLC applications, especially since they are fully compatible with current light‐emitting diode (LED) industrial technology.

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A Direct Epitaxial Approach To Achieving Ultrasmall and Ultrabright InGaN Micro Light-Emitting Diodes (μLEDs)

Cited by 51 publications

References 21 publications

Stretchable Transparent Light-Emitting Diodes Based on InGaN/GaN Quantum Well Microwires and Carbon Nanotube Films

Stretchable Transparent Light-Emitting Diodes Based on InGaN/GaN Quantum Well Microwires and Carbon Nanotube Films

Optical design of InGaN/GaN nanoLED arrays on a chip: toward: highly resolved illumination

Green InGaN Quantum Dots Breaking through Efficiency and Bandwidth Bottlenecks of Micro‐LEDs

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