A distribution of Ga+ ions in a silicon substrate for nano-dimensional masking

Bobrinetskii, I. I.; Nevolin, V. K.; Tsarik, K. A.; Chudinov, A. A.

doi:10.1134/s1063739713060036

Cited by 5 publications

(1 citation statement)

References 2 publications

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“…One of the main concerns in this research is to assure that after the FIB ablation and drilling of a commercial tip, in order to transform it into a drilled, light-sensitive photodetector, the reduced obtained tip will continue to behave as an AFM one, meaning that the contact surface will remain small enough to scan the sample's surface with good resolution. As mentioned above, the FIB drilling process is performed with a Helios 600 system (FEI) using a Ga + ion current of 9.7 pA for an energy of 30 keV and a spot size of about 12 nm for about 10 s. This leads to an ion dose of about 5 × 10 20 cm −2 , which exceeds the solubility limit of 4 × 10 19 cm −3 , causing the silicon lattice to collapse [32]. According to a previous study that used a similar FIB system and process, the projected range of the Ga + ions is about 27 nm, while the lateral range is less than 5 nm.…”

Section: Afm Conserved Functionality Of the Processed Tipmentioning

confidence: 99%

Advanced Surface Probing Using a Dual-Mode NSOM–AFM Silicon-Based Photosensor

et al. 2019

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A feasibility analysis is performed for the development and integration of a near-field scanning optical microscope (NSOM) tip–photodetector operating in the visible wavelength domain of an atomic force microscope (AFM) cantilever, involving simulation, processing, and measurement. The new tip–photodetector consists of a platinum–silicon truncated conical photodetector sharing a subwavelength aperture, and processing uses advanced nanotechnology tools on a commercial silicon cantilever. Such a combined device enables a dual-mode usage of both AFM and NSOM measurements when collecting the reflected light directly from the scanned surface, while having a more efficient light collection process. In addition to its quite simple fabrication process, it is demonstrated that the AFM tip on which the photodetector is processed remains operational (i.e., the AFM imaging capability is not altered by the process). The AFM–NSOM capability of the processed tip is presented, and preliminary results show that AFM capability is not significantly affected and there is an improvement in surface characterization in the scanning proof of concept.

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Section: Afm Conserved Functionality Of the Processed Tipmentioning

confidence: 99%