A Domino Bootstrapping 12V GaN Driver for Driving an On-Chip 650V eGaN Power Switch for 96% High Efficiency

Chen, Hsuan‐Yu; Lin, Wei-Tin; Liao, Cheng-Hsiang; Lin, Zong-Yi; Zhang, Zhiqiang; Kao, Yu Chen; Chen, Ke-Horng; Lin, Ying-Hsi; Lin, Shian-Ru; Tsai, Tsung-Yen

doi:10.1109/vlsicircuits18222.2020.9162979

Cited by 17 publications

(2 citation statements)

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“…Calibration with the junction temperature variation should be done by measuring the thermal impedance and power consumption. The junction temperature T J can be calculated by equation (4), and the factor K(T) in equation ( 2) can be extended by introducing junction temperature consideration, as given in equation ( 5):…”

Section: Correction By Heat Effectmentioning

confidence: 99%

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Equivalent circuit model of GaN high electron mobility transistor with consideration of non-ideal effects using genetic algorithm

Li,

Wang,

Chen

et al. 2023

J. Phys. D: Appl. Phys.

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This work proposes a semi-physical equivalent circuit model for GaN-based high electron mobility transistor (GaN HEMT), taking into account the non-ideal effects of both current source and resistance-capacitance components. The current source model is built based on both device operation and multiple interfaces setup for the important non-ideal effects, such as self-heating effect, channel length modulation, short channel effect, and so on. Moreover, according to the improved Meyer capacitance model with fringe capacitances, the nonlinear capacitances of GaN HEMT are modeled with a dependence on the bias voltages and gate geometry. The extraction of the model parameters is implemented accurately and efficiently in MATLAB through genetic algorithm. Moreover, the capacitance model is established to be mathematically simple and SPICE-compatible for the design of GaN-based integrated circuits (GaN ICs). The static and dynamic characteristics of GaN ICs have been simulated with an excellent agreement with the experimental results, validating that the established and well-packaged equivalent circuit model can be of great help to GaN HEMT development and ICs design.

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Section: Correction By Heat Effectmentioning

confidence: 99%

“…high power density [1]. Fortunately, wide-bandgap semiconductor devices have been explored and demonstrated for these special applications [2][3][4]. Among them, the GaNbased high electron mobility transistor (GaN HEMT) is one of the best candidates, achieving high frequeningy and high power.…”

Section: Introductionmentioning

confidence: 99%