A doping mechanism for organic semiconductors derived from SXPS measurements on co-evaporated films of CuPc and TCNQ and on a TCNQ/CuPc interface

Charge carrier densities in chemically doped organic semiconductors verified by two independent techniques

“…The hole carrier density characteristics correlate quite well with the results obtained by polaron absorption measurements, indicated by the parallel evolution of the linear fits of the double-logarithm plots. 15 In conclusion we studied the hole carrier density in MoO 3 doped S-2CBP at different doping concentrations. However, at lower doping concentrations further considerations in respect of the circuit model has to be done.…”

p -type doping efficiency of MoO3 in organic hole transport materials

“…27 Furthermore, assuming a phase separation between matrix and dopant, interface dipoles at the phase boundaries further lower the doping efficiency. 28 In addition, charge trapping might occur after the formation of charge transfer complexes immobilizing the generated charges on the radical cations of the organic hole transport materials. Further studies aiming at a comparison of charge transfer complexes and generated free charge carriers are currently in progress.…”

Organic Photovoltaic Devices Based on a New Class of Oligothienylenevinylene Derivatives as Donor Materials

“…In inorganic semiconductors the excess electrons are delocalized. In organic semiconductors the exact doping process is under discussion 11, but we assume here that also the doping electrons cannot be assigned to a single fixed molecule as the Fermi level is a statistical thermodynamic parameter. Hopping of the additional electrons in organic semiconductors may be viewed analogue to the partial charge due to delocalized electrons in inorganic semiconductors.…”