2016
DOI: 10.1016/j.sna.2016.03.011
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A double differential torsional accelerometer with improved temperature robustness

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Cited by 16 publications
(7 citation statements)
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“…For a traditional double differential torsional MEMS accelerometer, wet etching is utilized to fabricate the suspended silicon beam with an accurate sloping cross sectional shape [ 22 , 23 ]. However, the process enlarges the device area and reduces the utilization ratio of the silicon chip.…”
Section: Fabrication Processmentioning
confidence: 99%
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“…For a traditional double differential torsional MEMS accelerometer, wet etching is utilized to fabricate the suspended silicon beam with an accurate sloping cross sectional shape [ 22 , 23 ]. However, the process enlarges the device area and reduces the utilization ratio of the silicon chip.…”
Section: Fabrication Processmentioning
confidence: 99%
“…Inspired by the high performance butterfly gyroscope [ 19 , 20 ] and the differential vibrating beam accelerometer [ 21 ], our team has designed and reported two types of double differential torsional MEMS accelerometers based on single-beam structures [ 22 , 23 ]. To further improve the performance and promote the commercial value, this paper presents a novel double-beam double differential torsional MEMS accelerometer of only 4 mm 2 , which utilizes a double differential configuration composed of four proof masses split into two pairs.…”
Section: Introductionmentioning
confidence: 99%
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“…Nano-scale structures are extensively utilized in the design and manufacturing of modern nano-electro-mechanical systems (NEMS) due to their superior features [1]. Torsional nanobeams are fundamental structural elements of pioneering nano-engineered devices such as micro-thruster of nano-satellites [2], bio-torsional actuator [3], torsional accelerometer [4] and viscosity and mass density sensor [5]. It is well established that the local elasticity theory cannot be adopted to capture mechanical responses of nano-continua, and consequently, a variety of size-dependent elasticity models are available in literature.…”
Section: Introductionmentioning
confidence: 99%
“…On the other side, it is proved that a variation of the external temperature causes a shift of the resonant frequency of the resonators because of the variation of the silicon properties (see [23][24][25]) and some possible solutions to such issue have been already published (see [26,27]). Lee et al [28], for example, developed an environment-resistant packaging technology to improve the temperature robustness of MEMS sensors, while Li et al [26] and Xiao et al [29] reduced the temperature drift through novel configurations. Moreover, a significant amount of research has been devoted to study the temperature coefficient of frequency (TCf) of silicon [30][31][32] and some temperature compensation techniques [33][34][35] in micro-resonators.…”
Section: Introductionmentioning
confidence: 99%