A dual-source nonlinear measurement system oriented to the empirical characterization of low-frequency dispersion in microwave electron devices

Raffo, Antonio; Vadalí, Valeria; Traverso, Pier Andrea; Santarelli, Alberto; Vannini, G.; Filicori, F.

doi:10.1016/j.csi.2010.06.008

Cited by 1 publication

(2 citation statements)

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“…Microwave GaN devices exhibit a complex behavior under nonlinear dynamic operation, mainly related to the low-frequency dispersion of the electrical characteristics because of the presence of traps and thermal effects [76][77][78][79][80][81][82][83][84][85], which may limit device performance. In this context, correct modeling of these phenomena is essential to obtain accurate performance predictions.…”

Section: Large-signal Modelingmentioning

confidence: 99%

“…The equivalent circuit provides the technologists with a better feedback than behavioral models and enables circuit designers to do much faster simulations than with physical models. It will be shown that a crucial role for GaN HEMT modeling consists of taking into account the low-frequency (LF) dispersion, because of traps and thermal phenomena [76][77][78][79][80][81][82][83][84][85]. Nevertheless, as the technology progresses and becomes more mature, these undesired effects are minimized as much as possible to improve the device performance and reliability.…”

Section: Introductionmentioning

confidence: 99%

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Empowering GaN HEMT models: The gateway for power amplifier design

Crupi

Vadalà

Colantonio

et al. 2015

Int J Numerical Modelling

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The purpose of this invited paper is to give readers a comprehensive and critical overview on how to extract equivalent-circuit models for GaN HEMTs, which are the preferred devices for high-power high-frequency applications. This overview is meant to provide a practical modeling know-how for this advanced type of transistor, in order to support its development for improving device technology and circuit design. With the aim to broaden knowledge to empower models, experimental results are presented as illustrative examples of the most crucial challenges faced by the microwave engineers in modeling high-power GaN HEMTs. All the relevant aspects are covered, going from linear (also noise) to nonlinear models. The analysis is mainly focused on the modeling of distinctive peculiarities of GaN HEMTs. Particular attention is paid to study the importance of accurately modeling the kink effect in the output reflection coefficient, because of the relatively high transconductance, the peak in the magnitude of the short circuit current-gain, because of the relatively large intrinsic capacitances, and the low-frequency dispersion, because of trapping and thermal effects. Furthermore, to emphasize the key role of accurate device models for a successful circuit design, a practical example of power amplifier is discussed. Copyright © 2015 John Wiley & Sons, Ltd

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