A fast electro-thermal co-simulation modeling approach for SiC power MOSFETs

Ceccarelli, Lorenzo; Bahman, Amir Sajjad; Iannuzzo, Francesco; Blaabjerg, Frede

doi:10.1109/apec.2017.7930813

Cited by 24 publications

(11 citation statements)

References 13 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…The nonphysical Foster thermal networks consist of RC cells depending on the level of power losses. The R and C elements are calculated from the device transient thermal impedance in a wide range of the dissipated power extracted either from thermal transient measurements or extensive numerical simulations, as shown in, e.g., [12], [49], and [50]. This approach can be feasible for nominal device operation and highly challenging for high-temperature variations.…”

Section: -D Thermal Network For the Sic Power Mosfetmentioning

confidence: 99%

Accurate Temperature Estimation of SiC Power mosfets Under Extreme Operating Conditions

Tsibizov

Kovacevic-Badstuebner

Kakarla

et al. 2020

IEEE Trans. Power Electron.

View full text Add to dashboard Cite

Electrothermal modeling of silicon carbide (SiC) power devices is frequently performed to estimate the device temperature in operation, typically assuming a constant thermal conductivity and/or heat capacity of the SiC material. Whether and by how much the accuracy of the resulting device temperature prediction under these assumptions is compromised has not been investigated so far. Focusing on high-temperature operating conditions as found under short circuit (SC), this paper presents a comprehensive analysis of thermal material properties determining the temperature distribution inside SiC power MOSFETs. Using a calibrated technology computer-aided design (TCAD) electrothermal model, it is demonstrated that the temperature prediction of SiC power devices under SC operation when neglecting either the top metallization or the temperature dependence of the heat capacity is inaccurate by as high as 25%. The presented analysis enables to optimize compact electrothermal models in terms of accuracy and computational time, which can be used to assess the maximum temperature of SiC power MOSFETs in both discrete packages and multichip power modules exposed to fast thermal transients. A onedimensional thermal network of a SiC power MOSFET is proposed based on the thermal material properties, the size of the active area of the device, and its thickness. Index Terms-Electrothermal (ET) modeling, short circuit (SC), silicon carbide (SiC), TCAD, thermal conductivity. I. INTRODUCTIONW ITH the ever-increasing requirements for energy saving, the adoption of silicon carbide (SiC) power transistors has been following a growing trend across different power electronic (PE) applications, including electrical vehicles (EVs), EV charging infrastructure, power factor correction, power supply, photovoltaics, uninterruptible power supplies, motor drives, wind, and rail [1]. Increasing the acceptance of the emerging SiC technology in the field of high-frequency, high-temperature, and/or high-power applications needs to be supported by a comprehensive understanding of SiC material properties and their influence on the system performance. Nowadays, multiphysics modeling tools based on the underlying physics of the SiC material are widely employed both in academia and industry to

show abstract

Section: -D Thermal Network For the Sic Power Mosfetmentioning

confidence: 99%

Accurate Temperature Estimation of SiC Power mosfets Under Extreme Operating Conditions

Tsibizov

Kovacevic-Badstuebner

Kakarla

et al. 2020

IEEE Trans. Power Electron.

View full text Add to dashboard Cite

show abstract

“…A different approach to solving this problem was proposed in [105]. In the cited paper, three simulation software protocols were coupled: in SPICE voltage and current waveforms are determined using a compact electric transistor model.…”

Section: Hybrid Methodsmentioning

confidence: 99%

Methods of Fast Analysis of DC–DC Converters—A Review

Górecki

2021

Electronics

View full text Add to dashboard Cite

The paper discusses the methods of fast analysis of DC–DC converters dedicated to computer programmes. Literature methods of such an analysis are presented, which enable determination of the characteristics of the considered converters in the steady state and in the transient states. The simplifications adopted at the stage of developing these methods are discussed, and their influence on the accuracy of computations is indicated. Particular attention is paid to the methods of fast analysis of DC–DC converters, taking into account thermal phenomena in semiconductor devices. The sample results of computations of the DC–DC boost type converter obtained with the use of the selected methods are presented. The scope of application of particular computation methods and their duration times are discussed. Computations were performed with the use of SPICE and PLECS.

show abstract

“…The main assumption here is the unidirectional heat-flow from the device junction to the heatsink through the thermal stack material. The impedance value can be obtained in several ways: 1) from the module datasheet; 2) from experimental characterization of the heating/cooling response, and 3) from the FEM analysis of the device and its cooling system and the fitting of thermal impedance curves, as proposed in [12], [17]. The latter approach was used here for the extraction of the equivalent thermal network, presented in section IV.…”

Section: B Lumped Impedance Thermal Modelmentioning

confidence: 99%

“…reported in Table I. These were calculated by simulating the thermal structure of the device in ANSYS Icepak and applying power pulses in the junction region to observe its transient thermal response, similar to what was presented in [12].…”

Section: Fast Electro-thermal Simulation Of a Half-bridge Invertementioning

confidence: 99%

“…Condition mapping allows the creation of lookup tables (LUTs) that can be used in the simulation of a desired switching pattern, providing the device losses without significant loss in accuracy. The power losses are injected into a compact thermal network that accounts for the device and heatsink thermal behavior [11], [12]. The junction temperature can be therefore estimated and fed back to the LUTs, as shown in Fig.…”

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

Fast Electro-thermal Simulation Strategy for SiC MOSFETs Based on Power Loss Mapping

Ceccarelli

Kotecha

Iannuzzo

et al. 2018

2018 IEEE International Power Electronics and Application Conference and Exposition (PEAC)

Self Cite

View full text Add to dashboard Cite

A fast electro-thermal simulation strategy for SiC power MOSFETs is presented in this paper. This approach features the detailed mapping of the device power losses under a wide range of operating conditions by using a compact electrical model and its experimental validation for a 1.2 kV/ 36 A commercial device. The losses condition map is used in the simplified model of a half-bridge inverter topology. The average device losses per switching period are injected into a multi-layer thermal impedance network obtained via finite-element method (FEM) simulation. The strategy allows the electro-thermal simulation of a simple switching pattern in a very short time (seconds), compared to an equivalent physically-based circuit simulation, without significant accuracy loss, enabling long-timescale simulation and reliable, mission-profile oriented design of power electronic converters.

show abstract

A fast electro-thermal co-simulation modeling approach for SiC power MOSFETs

Cited by 24 publications

References 13 publications

Accurate Temperature Estimation of SiC Power mosfets Under Extreme Operating Conditions

Accurate Temperature Estimation of SiC Power mosfets Under Extreme Operating Conditions

Methods of Fast Analysis of DC–DC Converters—A Review

Fast Electro-thermal Simulation Strategy for SiC MOSFETs Based on Power Loss Mapping

Contact Info

Product

Resources

About