Fast Electro-thermal Simulation Strategy for SiC MOSFETs Based on Power Loss Mapping

Ceccarelli, Lorenzo; Kotecha, Ramchandra; Iannuzzo, Francesco; Mantooth, Alan

doi:10.1109/peac.2018.8590288

Cited by 12 publications

(12 citation statements)

References 15 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Microscopic thermal models make it possible to determine time-spatial distribution of the temperature of electronic components [75]. In contrast, compact thermal models make it possible to determine waveforms of one internal temperature, characterising the thermal state of each semiconductor device [76].…”

Section: Thermal Phenomena In Power Convertersmentioning

confidence: 99%

Methods of Fast Analysis of DC–DC Converters—A Review

Górecki

2021

Electronics

View full text Add to dashboard Cite

The paper discusses the methods of fast analysis of DC–DC converters dedicated to computer programmes. Literature methods of such an analysis are presented, which enable determination of the characteristics of the considered converters in the steady state and in the transient states. The simplifications adopted at the stage of developing these methods are discussed, and their influence on the accuracy of computations is indicated. Particular attention is paid to the methods of fast analysis of DC–DC converters, taking into account thermal phenomena in semiconductor devices. The sample results of computations of the DC–DC boost type converter obtained with the use of the selected methods are presented. The scope of application of particular computation methods and their duration times are discussed. Computations were performed with the use of SPICE and PLECS.

show abstract

Section: Thermal Phenomena In Power Convertersmentioning

confidence: 99%

Methods of Fast Analysis of DC–DC Converters—A Review

Górecki

2021

Electronics

View full text Add to dashboard Cite

show abstract

“…The usefulness of time-domain system models in these roles is dependent on their accuracy, convergence reliability, and simulation speed. However, there are significant challenges in achieving all three criteria simultaneously [5], especially when modeling fast-switching semiconductors, such as wide bandgap (WBG) devices [6], or multi-level converter topologies [7]. Because adoption of these two technologies is increasing in industry [1], [8], [9], application engineers have a strong motivation for understanding the performance tradeoffs associated with model design features.…”

Section: Introductionmentioning

confidence: 99%

Computational Efficiency Analysis of SiC MOSFET Models in SPICE: Dynamic Behavior

Nelson

Lemmon

Jimenez

et al. 2021

IEEE Open J. Power Electron.

View full text Add to dashboard Cite

Transient simulation of complex converter topologies is a challenging problem, especially in detailed analysis tools like SPICE. Transistor models presented for SPICE are often evaluated by accuracy, with less consideration for the computational cost of model elements. In order to optimize models for application simulations, this research quantifies the relative simulation performance of modeling approaches and contextualizes the results with regard to accuracy. It is well established that the primary contributor to semiconductor dynamic behavior is the voltage-dependent interelectrode capacitances. Therefore, this study isolates these model components to resolve their influence on model accuracy and runtime. Both the voltage-dependencies modeled, and the mathematic formulation chosen strongly influence the accuracy of interelectrode capacitance models. In addition to these factors, the specific implementation chosen within SPICE also determines simulation performance. Through careful evaluation of these factors, this study offers specific recommendations for optimal implementations of interelectrode capacitances in SPICE.

show abstract

“…However, failure characterization and lifetime assessment are still challenging problems in SiC devices [2,6]. Considering the differences of failure mechanisms in the conventional Silicon-based power modules, novel reliability monitoring technique is demanded to characterise all sorts of failure mechanisms in WBG devices [2,[7][8][9]. Condition Monitoring (CM) is a passive technique for assessing the switch degradation level and the health of the power module [2,10,11].…”

Section: Introductionmentioning

confidence: 99%

“…Thermo-mechanical cycling, caused by Coefficient of Thermal Expansion (CTE) mismatch during commonly higher temperature operation, is cited as the main factor in switch package-level degradation [2,9]. The main outcome of the switch degradation is mostly in the form of WB-related (WB heel cracking, WB lift-off, and WB fracture) or solder-related (solder cracking, solder delamination, and solder joint fatigue) failure modes [2].…”

Section: Introductionmentioning

confidence: 99%

High-Frequency Non-Invasive Magnetic Field-Based Condition Monitoring of SiC Power MOSFET Modules

2021

View full text Add to dashboard Cite

Current distribution anomaly can be used to indicate the onset of package-related failures modes in Silicon Carbide power MOSFET modules. In this paper, we propose to obtain the wire bond’s magnetic field profile using an array of Tunnel Magneto-Resistance (TMR) sensors, and characterise the small changes in the current density distribution to find the onset of the wire bond degradation processes, including wire bond lift-off, wire bond cracking, and wire bond fracture. We propose a novel condition monitoring technique where a non-galvanic high-bandwidth sensing and a reliability model monitor the health of the power switches. We designed a dedicated calibration set-up to examine the sensor array and calibrated to demonstrate the adequate sensitivity to a minimum 5% current anomaly detection in a single wire bond of the switching devices operating with 50 kHz switching frequency. We use a hardware-in-the-loop (HIL) experimental set-up to replicate wire bond-related failures in a 1200V/55A SiC MOSFET power module of a DC/DC Boost converter. Signal conditioning circuits are further designed to amplify and buffer the sensor readings. Experimental results showed the proposed technique is able to detect a wide range of package-related failures.

show abstract

Fast Electro-thermal Simulation Strategy for SiC MOSFETs Based on Power Loss Mapping

Cited by 12 publications

References 15 publications

Methods of Fast Analysis of DC–DC Converters—A Review

Methods of Fast Analysis of DC–DC Converters—A Review

Computational Efficiency Analysis of SiC MOSFET Models in SPICE: Dynamic Behavior

High-Frequency Non-Invasive Magnetic Field-Based Condition Monitoring of SiC Power MOSFET Modules

Contact Info

Product

Resources

About