Wide band-gap (WBG) field-effect devices are known to provide a system-level performance benefit compared to silicon devices when integrated into power electronics applications. However, the near-ideal features of these switching devices can also introduce unexpected behavior in practical systems due to the presence of parasitic elements. The occurrence of self-sustained oscillation is one such behavior that has not received adequate study in the literature. This paper provides an analytical treatment of this phenomenon by casting the switching circuit as an unintentional negative resistance oscillator. This treatment utilizes an established procedure from the oscillator design literature and applies it to the problem of power circuit oscillation. A simulation study is provided to identify the sensitivity of the model to various parameters, and the predictive value of the model is confirmed by experiment involving two exemplary WBG devices: a SiC vertical-channel JFET and a SiC lateral-channel MOSFET. The results of this study suggest that susceptibility to self-sustained oscillation is correlated to the available power density of the device relative to the parasitic elements in the circuit, for which wide band-gap devices, to include SiC and GaN transistors, are in a class approaching that of the radio frequency domain.

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The present article introduces a new and easy to use counting application for the Apple iPad. The application “ImagePAD” takes advantage of the advanced user interface features offered by the Apple iOS® platform, simplifying the rather tedious task of quantifying features in anatomical studies. For example, the image under analysis can be easily panned and zoomed using iOS-supported multi-touch gestures without losing the spatial context of the counting task, which is extremely important for ensuring count accuracy. This application allows one to quantify up to 5 different types of objects in a single field and output the data in a tab-delimited format for subsequent analysis. We describe two examples of the use of the application: quantifying axons in the optic nerve of the C57BL/6J mouse and determining the percentage of cells labeled with NeuN or ChAT in the retinal ganglion cell layer. For the optic nerve, contiguous images at 60× magnification were taken and transferred onto an Apple iPad®. Axons were counted by tapping on the touch-sensitive screen using ImagePAD. Nine optic nerves were sampled and the number of axons in the nerves ranged from 38872 axons to 50196 axons with an average of 44846 axons per nerve (SD = 3980 axons).

Transient simulation of complex converter topologies is a challenging problem, especially in detailed analysis tools like SPICE. Much of the recent literature on SPICE transistor modeling ignores the requirements of application designers and instead emphasizes detail, physical accuracy, and complexity. While these advancements greatly improve model accuracy, they also serve to increase computational complexity, making the resulting models less attractive to application designers. While some authors depart from this trend and present models which emphasize simulation speed, their results and analysis are limited to qualitative observation. This research develops a methodology to quantify the computational cost of model features and competitively benchmark models against each other. Additionally, it reviews recently published SiC MOSFET models and presents a trade study on several candidate models likely to fare well in complex application simulations. Finally, this study also identifies key considerations which should be carried forward into future model design.