Methodology for Characterization of Common-Mode Conducted Electromagnetic Emissions in Wide-Bandgap Converters for Ungrounded Shipboard Applications

Lemmon, Andrew N.; Cuzner, Robert; Gafford, James; Hosseini, Rasoul; Brovont, Aaron D.; Mazzola, Michael S.

doi:10.1109/jestpe.2017.2721429

Cited by 58 publications

(15 citation statements)

References 34 publications

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“…Thus, GaN devices are limited to low-voltage applications (<650 V) while SiC devices are preferred for high-voltage operations [2]. WBG devices have already been successfully used on several power electronics applications, such as: wireless chargers [5], [6], onboard EV chargers [7], [8], energy storage systems [9], shipboard electrification [10], and AC electric drives [11]. Furthermore, two-level SiC converters such as voltage source converters (Fig.…”

Section: Introductionmentioning

confidence: 99%

Comprehensive Analysis of Hexagonal Sigma-Delta Modulations for Three-Phase High-Frequency VSC Based on Wide-Bandgap Semiconductors

Lumbreras

Zaragoza

Berbel

et al. 2021

IEEE Trans. Power Electron.

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The efficiency of wide-bandgap (WBG) power converters can be greatly improved using high-frequency modulation techniques. This paper proposes using single-loop and double-loop hexagonal sigma-delta modulation (H-Σ∆ and DH-Σ∆ respectively) for voltage source converters (VSC) that use silicon carbide (SiC) semiconductors. These allow high switching frequencies to operate more efficiently than silicon devices. Thus, Σ∆ modulations are excellent candidates for taking advantage of WBG devices. The proposed modulation techniques allow working with a variable switching frequency, thus producing an extreme reduction in switching losses and mitigating the low-order harmonics in comparison with the classical space vector pulse width modulation (SVPWM) technique, and with the innovative variable switching frequency pulse width modulation (VSFPWM). The performance and losses of both Σ∆ techniques are analysed here using Matlab/Simulink and PLECS, and then compared with SVPWM and VSFPWM. Furthermore, the frequency spectrum and the total harmonic distortion (THD) are evaluated. Experimental results performed on a VSC converter that uses SiC MOSFETs show how H-Σ∆ and DH-Σ∆ greatly improve efficiency and generate fewer low-order harmonics than the SVPWM and VSFPWM strategies do.

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Section: Introductionmentioning

confidence: 99%

Comprehensive Analysis of Hexagonal Sigma-Delta Modulations for Three-Phase High-Frequency VSC Based on Wide-Bandgap Semiconductors

Lumbreras

Zaragoza

Berbel

et al. 2021

IEEE Trans. Power Electron.

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show abstract

“…By application of silicon carbide (SiC) devices, the system power density can be further improved through the reduction in size of cooling systems or passive components [2,5,6]. With low loss, fast switching speed, and high temperature withstanding capabilities, SiC devices are considered to be the key driving force for high performance and high power density converters in automotive, aerospace and industrial applications [2,3,[6][7][8][9].…”

Section: Introductionmentioning

confidence: 99%

“…However, many of the performance advantages of SiC devices are attributed to their increased switching speeds (di/dt, dv/dt) and the resulting high switching frequency capability, which raises the issues of significantly increased electromagnetic interference (EMI) in power converters [8][9][10][11][12][13][14]. As a result, costly and bulky EMI suppression measures are needed to suppress the emitted noise below the stringent EMI standard, which has become the main barrier to the increase in power density [15].…”

Section: Introductionmentioning

confidence: 99%

Conducted EMI Investigation of a SiC-Based Multiplexing Converter for EV/PHEV

Zhang

Wang

et al. 2021

IEEE Access

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This paper investigates the conducted electromagnetic interference (EMI) characteristics of an on-board multiplexing converter that utilizes paralleled silicon carbide (SiC) devices to achieve high efficiency and high-power density for the application in electric vehicles (EVs) and plug-in hybrid electric vehicles (PHEVs). The multiplexing converter can operate as a three-phase interleaved DC/DC converter with a peak output power of 60 kW or an integrated two-stage non-isolated on-board charger (OBC) with an output power of 6.6 kW. The novelty of this paper is that it reveals that in the DC/DC mode the series resonance between the input negative lead parasitic inductance and the high frequency transmission line effects of the input power inductor will increase the conducted EMI levels, which can be mitigated by optimizing the winding methods of the power inductor or by adding a small capacitor, and reveals that in the non-isolated OBC mode the shielded cable on the battery-side will increase the grid-side EMI in the low frequency ranges, which can be suppressed by integrated installation of EMI filters without affecting the system power density. Firstly, parasitic parameters of the components of the multiplexing converter, such as the power inductors, the SiC MOSFETs and the shielded cables, are extracted and validated with impedance measurements, and the corresponding equivalent circuit models are established. Then, the conducted EMI simulation models of the multiplexing converter in different working modes are established. The influence of different interference sources and different parasitic parameters on the system EMI characteristics are analyzed, and the effective EMI suppression measures are given without affecting the system power density. Finally, the conducted EMI characteristics of the multiplexing converter and the effectiveness of the proposed EMI suppression measures are tested and verified through experiments.INDEX TERMS Common mode (CM), electromagnetic interference (EMI), EMI modeling, EMI reduction, EMI simulation, parasitic parameters, silicon carbide (SiC) MOSFET.

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“…Wide band gap semiconductor materials, including silicon carbide and gallium nitride, have more advantages than silicon. Therefore, wide gap power devices play an increasingly important role in power electronic systems [1][2][3]. The critical electric field, saturation drift velocity, electron mobility, and thermal conductivity of wide band gap semiconductor materials are higher than those of silicon materials [4].…”

Section: Introductionmentioning

confidence: 99%

An Online Extraction Method of Noise Source Impedance Based on Network Analyzer

Du¹,

Li²,

Dai³

et al. 2021

PIER Letters

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This paper presents an online noise source impedance extraction method based on network analyzer. Firstly, the composition scheme of the measurement method is given, the equivalent circuit model of the measurement system established, and the port structure of the equivalent circuit analyzed. Secondly, two known standard resistances are used to calibrate the measuring system and connecting wires. Finally, the passive device and DC/DC converter are used as the equipment to be tested, and the measurement results are compared with those of other methods and impedance analyzer. The comparison results show that the measurement method has high measurement accuracy and good temperature sensitivity.

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Methodology for Characterization of Common-Mode Conducted Electromagnetic Emissions in Wide-Bandgap Converters for Ungrounded Shipboard Applications

Cited by 58 publications

References 34 publications

Comprehensive Analysis of Hexagonal Sigma-Delta Modulations for Three-Phase High-Frequency VSC Based on Wide-Bandgap Semiconductors

Comprehensive Analysis of Hexagonal Sigma-Delta Modulations for Three-Phase High-Frequency VSC Based on Wide-Bandgap Semiconductors

Conducted EMI Investigation of a SiC-Based Multiplexing Converter for EV/PHEV

An Online Extraction Method of Noise Source Impedance Based on Network Analyzer

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