Computational Efficiency Analysis of SiC MOSFET Models in SPICE: Dynamic Behavior

Abstract

Transient simulation of complex converter topologies is a challenging problem, especially in detailed analysis tools like SPICE. Transistor models presented for SPICE are often evaluated by accuracy, with less consideration for the computational cost of model elements. In order to optimize models for application simulations, this research quantifies the relative simulation performance of modeling approaches and contextualizes the results with regard to accuracy. It is well established that the primary contributor to semiconductor dynamic behavior is the voltage-dependent interelectrode capacitances. Therefore, this study isolates these model components to resolve their influence on model accuracy and runtime. Both the voltage-dependencies modeled, and the mathematic formulation chosen strongly influence the accuracy of interelectrode capacitance models. In addition to these factors, the specific implementation chosen within SPICE also determines simulation performance. Through careful evaluation of these factors, this study offers specific recommendations for optimal implementations of interelectrode capacitances in SPICE.

Improved simulation modelling and its verification for SiC MOSFET

“…A universal SPICE model for field‐effect transistors, independent from technology and semiconductor material, is developed in [25]. Through careful evaluation of model accuracy and run‐time, specific recommendations for optimal implementations of interelectrode capacitances was offered in SPICE [26]. Comprehensive characterization of these non‐linear interelectrode capacitances are carried out in [27] to develop accurate simulation models and to improve understanding of the device behaviour.…”

An LTSpice - MATLAB Interface for Mitigating Convergence Problems in Circuit Optimization with SPICE

“…Improved convergence criterion has been proposed in [2], in order to combat the recurring issue of false convergence due to oscillatory behaviour. Multiple works focus on switching device SPICE modelling, with particular attention given to the convergence [5].…”

An Efficient Electro-Thermal Compact Model of SiC Power MOSFETs Including Third Quadrant Behavior

“…Another advanced issue of the compact modeling of SiC power MOSFETs is the accurate modeling of interelectrode capacitances. In reference [8], it was shown that the interelectrode capacitances are substantially more influential than the conduction branch in determining the dynamic behavior of the MOSFET model. This necessitates very accurate interelectrode capacitance modeling in the device's operating range.…”

“…This necessitates very accurate interelectrode capacitance modeling in the device's operating range. Reference [8] also presents an extensive literature study on the existing capacitance models of the power MOSFET. According to [8], current physics-based and semiphysical models lag in capacitance modeling compared to the Look-Up Table (LUT) based models.…”

“…Reference [8] also presents an extensive literature study on the existing capacitance models of the power MOSFET. According to [8], current physics-based and semiphysical models lag in capacitance modeling compared to the Look-Up Table (LUT) based models. However, as described earlier, LUT-based models are behavioral and cannot predict device scaling.…”