A fast response/recovery ppb-level H2S gas sensor based on porous CuO/ZnO heterostructural tubule via confined effect of absorbent cotton

Na, Hui-Bing; Zhang, Xianfa; Zhang, Meng; Deng, Zhao‐Peng; Cheng, Xiaoli; Huo, Li‐Hua; Gao, Shan

doi:10.1016/j.snb.2019.126816

Cited by 90 publications

(55 citation statements)

References 49 publications

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“…The CuO-based gas-sensing materials utilize a pure copper oxide, as well as copper oxide doped with various metals, e.g., Ag, Au, Cr, Pt, Sb, Si [17], Al [18], Fe, Li [19,20], Na [20], grapheme [21], Pd [22], Zn [23], and other oxides. Recently, the following compositions of copper oxide and other metal oxides (MOX) were reported, such as CuO/TiO 2 [24], CuO/CuS [25], ZnO/CuO [26][27][28], CuO/In 2 O 3 [29], CuO/NiO [30,31], WO 3 /CuO [32], rGO/CuO [33,34], PtO 2 /CuO [35], Fe 2 O 3 /CuO [36], CuO/SnO 2 [37][38][39], and CuO/CeO 2 [9,40].…”

Section: Introductionmentioning

confidence: 99%

“…The CuO-based gas sensors are used for detection of reducing gases and oxidizing gases, such as CO [41][42][43][44][45], H 2 [23,[45][46][47], NH 3 [33,43], C 6 H 6 and C 7 H 8 [45,48], H 2 S [26,37,38,43], CH 3 OH and C 3 H 6 O [40], C 2 H 5 OH [43,49], and NO 2 [41,43,45,[50][51][52], SO 2 [43,45], O 2 [45], and CO 2 [43], respectively. The responses are usually defined as the resistance ratio R a /R g or R g /R a , where R a and R g are electrical resistances in air and target gas, respectively.…”

Section: Introductionmentioning

confidence: 99%

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CuO-Ga2O3 Thin Films as a Gas-Sensitive Material for Acetone Detection

Dyndał

Zarzycki

Andrysiewicz³

et al. 2020

Sensors

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The p-n heterostructures of CuO-Ga2O3 obtained by magnetron sputtering technology in a fully reactive mode (deposition in pure oxygen) were tested under exposure to low acetone concentrations. After deposition, the films were annealed at previously confirmed conditions (400 °C/4 h/synthetic air) and further investigated by utilization of X-ray diffraction (XRD), X-ray reflectivity (XRR), energy-dispersive X-ray spectroscopy (EDS). The gas-sensing behavior was tested in the air/acetone atmosphere in the range of 0.1–1.25 ppm, as well as at various relative humidity (RH) levels (10–85%). The highest responses were obtained for samples based on the CuO-Ga2O3 (4% at. Ga).

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Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

CuO-Ga2O3 Thin Films as a Gas-Sensitive Material for Acetone Detection

Dyndał

Zarzycki

Andrysiewicz³

et al. 2020

Sensors

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“…Porous materials offer many advantages, such as high surface area, energy efficiency, high permeability and low weight [ 1 , 2 , 3 , 4 , 5 , 6 ]. Therefore, they have been widely applied for the development of batteries, separation and filtration materials, catalysts for synthesis and heat dissipation sensors, among other applications [ 7 , 8 , 9 , 10 , 11 , 12 , 13 , 14 , 15 , 16 , 17 ].…”

Section: Introductionmentioning

confidence: 99%

Preparation of a Cellulose Column for Enhancing the Sensing Efficiency of the Biocide 2-n-Octyl-4-Isothiazolin-3-One

Hong

Kang

2020

Polymers

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In this study, a cellulose acetate (CA) membrane with pores generated by a water pressure treatment was investigated for its ability to serve as a pretreatment filter device for the detection of 2-n-octyl-4-isothiazolin-3-one (OIT). Pores were generated by applying a water pressure of 8 bar to a membrane manufactured using a CA-based polymer solution. The CA used for the manufacturing was an environment-friendly, low-cost and highly energy-efficient material. Furthermore, since the fabricated porous CA polymeric film possessed many hydrophilic functional groups, it could strongly bind hydrophilic substances while avoiding interaction with hydrophobic substances. OIT, which comprises a hydrophobic bond that forms weak bonds over time, can break down more easily than hydrophilic impurities. The different extents of interaction occurring between either the toxic fungicide OIT or the hydrophilic impurities and the CA film were determined by Fourier-transform infrared (FT-IR) spectroscopy. The physicochemical changes in the resulting membrane, which occurred when the pores were generated, were investigated through scanning electron microscopy (SEM) and thermogravimetric analysis (TGA).

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“…Oxide semiconductor sensors using a change in a depletion layer enlarged by formation of a p-n junction can be categorized following: the enlargement of depletion layer originates only from p-n junction [7][8][9][10][11][12][13][14][15] ; that from sulfurization on the surface of p-type oxide. Especially, latter contains electronic sensitizing by sulfurization [16][17][18][19][20] , as shown in Table 1. Among the former, the morphology of n-TiO 2 /p-CuO nanowires was effective to enhance sensor response to 1 ppm CO as one of reductant gases when the wall thickness of TiO 2 shell was 60 nm.…”

mentioning

confidence: 99%

“…[7][8][9][10][11][12][13][14][15] , and that from sulfurization on the surface of p-type oxide in Refs. [16][17][18][19][20] . www.nature.com/scientificreports/…”

mentioning

confidence: 99%

Direct observation of potential phase at joining interface between p-MgO and n-MgFe2O4

Sakaguchi

Nara

Hashishin

et al. 2020

Sci Rep

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Visualization of the depletion layer is a significant a guideline for the material design of gas sensors. We attempted to measure the potential barrier at the interface of core–shell microspheres composed of p-MgO/n-MgFe2O4/Fe2O3 from the inside out by means of Kelvin probe force microscopy (KPFM) as a first step to visualizing enlargement of the depletion layer. As determined by high-angle annular dark-field scanning transmission electron microscopy, ca. 70% of the microspheres were hollow with a wall thickness of ca. 200 nm. Elemental mapping revealed that the hollow particles were composed of ca. 20 nm of MgO, ca. 80 nm of MgFe2O4, and ca. 100 nm of Fe2O3. A difference of 0.2 V at the p-MgO/n-MgFe2O4 interface was clarified by KPFM measurements of the hollow particles, suggesting that this difference depends on the formation of a p–n junction. The potential barrier enlarged by the formation of a p–n junction was considered to increase the resistance in air (Ra), since the Ra of the core–shell hollow microspheres was higher than that of MgO, Fe2O3, MgO–Fe2O3, and MgO/MgFe2O4/Fe2O3 particles with irregular shapes. Measurement of the potential barrier height by KPFM is a promising potential approach to tuning the gas sensitivity of oxide semiconductors.

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A fast response/recovery ppb-level H2S gas sensor based on porous CuO/ZnO heterostructural tubule via confined effect of absorbent cotton

Cited by 90 publications

References 49 publications

CuO-Ga2O3 Thin Films as a Gas-Sensitive Material for Acetone Detection

CuO-Ga2O3 Thin Films as a Gas-Sensitive Material for Acetone Detection

Preparation of a Cellulose Column for Enhancing the Sensing Efficiency of the Biocide 2-n-Octyl-4-Isothiazolin-3-One

Direct observation of potential phase at joining interface between p-MgO and n-MgFe2O4

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