A Ferroelectric and Charge Hybrid Nonvolatile Memory&amp;#x2014;Part II: Experimental Validation and Analysis

Rajwade, Shantanu; Auluck, Kshitij; Phelps, Joshua B.; Lyon, Keith G.; Shaw, Jonathan; Kan, Edwin C.

doi:10.1109/ted.2011.2175397

Cited by 12 publications

(4 citation statements)

References 28 publications

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“…Furthermore, though it is only a hypothesis and not proved here, 5 nm thick Al 2 O 3 layer is so thin that charges may tunnel from p-Si through Al 2 O 3 layer to P(VDF-TrFE)/Al 2 O 3 interface to partly compensate polarization charges. S. Rajwade et al have proposed and experimentally realized ferroelectric and charge hybrid nonvolatile memory devices in order to improve retention property of both logic states, 21,22 where charges can tunnel through 5.4 nm thick SiO 2 layer and then trap in 2.5 nm thick HfO 2 layer. If charge tunneling happens in P(VDF-TrFE)/Al 2 O 3 /p-Si capacitors, retention property is expected to be further improved.…”

Section: -8mentioning

confidence: 99%

Piezoresponse force microscopy study on ferroelectric polarization of ferroelectric polymer thin films with various structural configurations

Zhang

Weng

et al. 2015

AIP Advances

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Ferroelectric polymer-based memory devices have attracted much attention due to their potential in low-cost flexible memories. However, bad retention property of recorded logic states limited their applications. Though mechanisms of retention degradation in ferroelectric memories are complicated and still an open question, depolarization in ferroelectric polymer layer was regarded as the main influencing factor. Here we reported our piezoresponse force microscopy (PFM) study of retention property of polarization states on various ferroelectric polymer based structures. PFM results indicated that, as for ferroelectric/semiconductor structure and ferroelectric/insulator/semiconductor structure with thin insulating layer, both positive and negative polarization states could retain for a relatively long time. Mechanisms of good retention of polarization states were discussed. The discrepancy in bad retention of logic states and good polarization retention of ferroelectric layer was also analyzed.

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Section: -8mentioning

confidence: 99%

Piezoresponse force microscopy study on ferroelectric polarization of ferroelectric polymer thin films with various structural configurations

Zhang

Weng

et al. 2015

AIP Advances

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“…In order to generate better performances of battery charging, many battery charging methods have been proposed. They are constant trickle current (CTC), constant current (CC), and CC and constant-voltage (CC-CV) hybrid charge methods [22]. Among these methods, the CTC charging method needs a larger charging time.…”

Section: Buck-boost Convertermentioning

confidence: 99%

Buck-Boost/Forward Hybrid Converter for PV Energy Conversion Applications

Tseng

Chen²,

Wang³

2014

International Journal of Photoenergy

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This paper presents a charger and LED lighting (discharger) hybrid system with a PV array as its power source for electronic sign indicator applications. The charger adopts buck-boost converter which is operated in constant current mode to charge lead-acid battery and with the perturb and observe method to extract maximum power of PV arrays. Their control algorithms are implemented by microcontroller. Moreover, forward converter with active clamp circuit is operated in voltage regulation condition to drive LED for electronic sign applications. To simplify the circuit structure of the proposed hybrid converter, switches of two converters are integrated with the switch integration technique. With this approach, the proposed hybrid converter has several merits, which are less component counts, lighter weight, smaller size, and higher conversion efficiency. Finally, a prototype of LED driving system under output voltage of 10 V and output power of 20 W has been implemented to verify its feasibility. It is suitable for the electronic sign indicator applications.

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“…1 Benefiting from its ferroelectricity (its remanent polarization is 6−8 μC/cm 2 and the coercive electric field is 45−55 MV/m), organic nonvolatile memory devices such as ferroelectric capacitors (FC), 2 ferroelectric field-effect transistors (FeFET), 3,4 ferroelectric diodes (FD), 5,6 and ferroelectric junctions (FJ), 7 have been heavily developed for the application of flexible electronics. 8−10 Among these devices, the interface between the ferroelectric layer and its adjacent layer (including electrode, semiconductor, and insulator) plays a key role in controlling ferroelectric polarization switching behavior, 11,12 tuning charge transport, 13−16 modulating charge injection, 17,18 and even affecting operation stability. 19 Hysteresis property in the electric characteristics of these devices is widely concerned, which is attributed to the hysteretic electric polarization induced by spontaneous ferroelectric dipole rotation in ferroelectrics.…”

Section: Introductionmentioning

confidence: 99%

“…To our knowledge, polyvinylidene fluoride and its copolymer, poly(vinylidene fluoride-trifluoroethylene), denoted as P(VDF-TrFE), has been widely investigated due to its ferroelectricity since 1969, which is analogous to ferromagnetism, exhibiting spontaneous electric polarization reoriented by an external electric field . Benefiting from its ferroelectricity (its remanent polarization is 6–8 μC/cm 2 and the coercive electric field is 45–55 MV/m), organic nonvolatile memory devices such as ferroelectric capacitors (FC), ferroelectric field-effect transistors (FeFET), , ferroelectric diodes (FD), , and ferroelectric junctions (FJ), have been heavily developed for the application of flexible electronics. − Among these devices, the interface between the ferroelectric layer and its adjacent layer (including electrode, semiconductor, and insulator) plays a key role in controlling ferroelectric polarization switching behavior, , tuning charge transport, − modulating charge injection, , and even affecting operation stability …”

Section: Introductionmentioning

confidence: 99%

Frequency-Dependent Multistep Ferroelectric Polarization Switching Mechanism in P(VDF-TrFE)-Based Capacitors Induced by Polystyrene Electret-like Modulation

Zhao,

Ren,

Yang

et al. 2024

ACS Appl. Mater. Interfaces

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In this work, we investigate multistep ferroelectric polarization switching dynamics of a series of poly(vinylidene fluoride-trifluoroethylene)/polystyrene, P(VDF-TrFE)/PS, as active layers in ferroelectric capacitors with variable P(VDF-TrFE)/ PS thickness ratios and a wide range of driving voltage frequencies (1−1000 Hz). The PS electret-like modulation effects on the depolarized field fluctuation are proven to be responsible for this multistep ferroelectric polarization switching process. To be specific, the switching current density peak splits into two peaks in both positive and negative voltage ranges according to the stimulus−response (S−R) data from the metal−ferroelectric− electret−metal capacitor driven by a periodic triangular voltage wave. The double-peak current trough appears when the transitorily suppressed ferroelectric polarization switching occurs while the discharge and recharge of the PS electret by external voltage brings a specific dynamic change in the electric field across ferroelectric (E FE ). We also propose a theoretical model to simulate the ferroelectric polarization switching process at a current trough zone. This phenomenon provides new concepts on the electret-modulated multistep ferroelectric switching dynamics, and such switching mechanisms are critical for realizing reliable nonvolatile memory applications in flexible electronics.

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A Ferroelectric and Charge Hybrid Nonvolatile Memory—Part II: Experimental Validation and Analysis

Cited by 12 publications

References 28 publications

Piezoresponse force microscopy study on ferroelectric polarization of ferroelectric polymer thin films with various structural configurations

Piezoresponse force microscopy study on ferroelectric polarization of ferroelectric polymer thin films with various structural configurations

Buck-Boost/Forward Hybrid Converter for PV Energy Conversion Applications

Frequency-Dependent Multistep Ferroelectric Polarization Switching Mechanism in P(VDF-TrFE)-Based Capacitors Induced by Polystyrene Electret-like Modulation

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