A FinBOX Based Ge FinEHBTFET: Design and Investigation

Ashita,; Loan, Sajad A.; Alkhammash, Hend I.; Rafat, M.

doi:10.1007/s12633-021-01006-6

Cited by 2 publications

(3 citation statements)

References 32 publications

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“…Since these parameters affecting P tun can be extracted from the energy band, the effect of P tun on I on can be explained by the energy band. Previous publications 21,32) have demonstrated the existence of two tunneling mechanisms in traditional EHBTFETs (i.e., PT and LT ), and that I on and I off are mainly controlled by LT and PT, respectively. Therefore, only the energy bands of LT in the on-state (V ds = 0.5 V and V gs = 0.6 V) are calculated to explain the difference in I on between the two devices and are plotted in Fig.…”

Section: Resultsmentioning

confidence: 99%

“…It follows that the I off of fin EHBTFETs only originates from PT in the bottom channel, which is consistent with previous publications. 21,32) Figure 2(a) shows that HBF-EHBTFET has a lower threshold voltage (V th ), with a value of 0.16 V. Here, V th refers to V gs at which the drain current (I ds ) equals 0.1 μ A μm −1 . HBF-EHBTFET achieves a lower V th because the LT of HBF-EHBTFET can be turned on as long as the V gs is applied, while the PT of F-EHBTFET occurs before the LT (see the white circles).…”

Section: Resultsmentioning

confidence: 99%

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An InGaAs-based Fin-EHBTFET with a heterogate and barrier layer for high performance

Liu,

Li,

Zhou

et al. 2024

Jpn. J. Appl. Phys.

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This paper proposes a fin electron-hole bilayer tunneling field-effect transistor with a heterogate and an InAlAs barrier layer (HBF-EHBTFET). The heterogate can suppress off-state leakage caused by point tunneling, while the InAlAs barrier layer prevents source-drain direct tunneling, significantly reducing off-state current (Ioff). P-type Gaussian doping can not only solve the problem of inability to generate a hole layer during device fabrication, but also reduce the turn-on voltage of line-tunneling, ultimately increasing on-state current and reducing average subthreshold swing (SSavg). By optimizing parameters of the heterogate and InAlAs barrier layer, HBF-EHBTFET can obtain Ioff of 2.37×10-16 A/μm, SSavg of 17.97 mV/dec, cutoff frequency (fT) of 13.2 GHz, and gain bandwidth product (GBW) of 1.58 GHz. Compared with traditional EHBTFET, HBF-EHBTFET exhibits a reduction in Ioff by four orders of magnitude, a decrease in SSavg by 65.27%, and an increase in fT and GBW by 78.59 % and 93.62 %, respectively.

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Section: Resultsmentioning

confidence: 99%

Section: Resultsmentioning

confidence: 99%

An InGaAs-based Fin-EHBTFET with a heterogate and barrier layer for high performance

Liu,

Li,

Zhou

et al. 2024

Jpn. J. Appl. Phys.

View full text Add to dashboard Cite

show abstract

“…It is worth noting that there are various studies in the literature that adopt the semiclassical, self-consistent Schrödinger-Poisson solver with the density gradient model for quantum confinement and the WKB approximation-based non-local band-to-band tunnelling model to calculate tunneling currents. Our study follows a similar approach [67][68][69][70][71][72][73][74]. However, it is important to emphasize that these studies take a qualitative simulation approach, primarily focusing on analyzing the behavior and characteristics of the proposed device based on its underlying physical principles without necessarily quantifying its performance.…”

Section: Device Structure and Simulation Setupmentioning

confidence: 99%

Charge-plasma-based inverted T-shaped source-metal dual-line tunneling FET with improved performance at 0.5 V operation

et al. 2023

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In this paper, a charge plasma-based inverted T-shaped source-metal dual line-tunneling field-effect transistor (CP-ITSM-DLTFET) has been proposed to improve the ON current (ION) by increasing the line-tunneling area. In the proposed structure, the charge plasma technique is used to induce the dopants in the source/drain region. Due to its doping-less structure, the proposed CP-ITSM-DLTFET is immune to random dopant fluctuations and does not require an expensive thermal annealing technique. This makes the proposed device’s fabrication easier and more efficient. The proposed CP-ITSM-DLTFET comprises an inverted T-shaped source metal (sandwiched between the Si-channel) and creates gate-to-source overlap and increases the tunneling area vertically on both sides of the Si-channel. The vertical line-tunneling area in the proposed structure makes the device able to be aggressively scaled compared to conventional TFETs for future technology. The proposed CP-ITSM-DLTFET outperforms almost all pre-existing dopingless TFETs in terms of DC and RF parameters. The switching performance (like high ION=31.88uA/um, steeper AVSS=23.42mV/dec (over 12-order of drain current), and high ION/IOFF ratio of 1.6×1013) and the RF performance (like, transconductance (gm)=0.37mS, Cut-off frequency (fT)=90.18GHz, & Gain Bandwidth product (GBW)=32.3GHz) of the proposed CP-ITSM-DLTFET is superior to almost all pre-existing Si, SiGe, & Ge based doping-less TFETs. Moreover, the proposed CP-ITSM-DLTFET-based CMOS inverter has also been comprehensively studied in the paper, showing a good noise margin NMH=0.198V (39.8% of VDD) and NML=0.206V (41.2% of VDD) with a high voltage gain of 30.25 at VDD=0.5V, suggesting great potential for future low power applications

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A FinBOX Based Ge FinEHBTFET: Design and Investigation

Cited by 2 publications

References 32 publications

An InGaAs-based Fin-EHBTFET with a heterogate and barrier layer for high performance

An InGaAs-based Fin-EHBTFET with a heterogate and barrier layer for high performance

Charge-plasma-based inverted T-shaped source-metal dual-line tunneling FET with improved performance at 0.5 V operation

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