A First Evaluation of Thick Oxide 3C-SiC MOS Capacitors Reliability

Li, Fan; Mawby, P.A.; Qiu, Song; Pérez‐Tomás, Amador; Shah, V. A.; Sharma, Yogesh; Hamilton, Dean P.; Fisher, C; Gammon, P. M.; Jennings, Michael R.

doi:10.1109/ted.2019.2954911

Cited by 10 publications

(7 citation statements)

References 49 publications

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“…To extract the dielectric lifetime of all of the samples, t 63% is plotted as a function of the applied electric field displayed in Figure a–d . The normal operating electric field of the SiC MOS device is usually 3 MV/cm, , and the obtained lifetime of the sample of NH-8 min is 8.30 years under this condition (Figure d), which is significantly improved compared with that of the sample of NH-0 min (0.02 years). Furthermore, as shown in Figure e, the lifetime of NH-8 min could reach 34.7 years under 3 MV/cm when we select the t 83.7% as the t BD to calculate.…”

Section: Resultsmentioning

confidence: 99%

Reliability and Stability Improvement of MOS Capacitors via Nitrogen–Hydrogen Mixed Plasma Pretreatment for SiC Surfaces

Wei

Bai

Xie

et al. 2023

ACS Appl. Mater. Interfaces

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We investigated the effect of nitrogen–hydrogen (NH) mixed plasma pretreatment of 4H–SiC surfaces on SiC surface properties, SiO2/SiC interface quality, and the reliability and voltage stability of metal–oxide–semiconductor (MOS) capacitors. The NH plasma pretreatment decreased the incomplete oxide and contaminants on the SiC surface and reduced the density of SiO2/SiC interface traps. Compared with the untreated sample, the dielectric insulating characteristics and reliability of samples pretreated by NH plasma were improved. We also demonstrated that the shift/hysteresis of the flat band voltage (V fb) and the midgap voltage (V mg) induced by bias temperature stress for SiC MOS capacitors after NH plasma pretreatment was significantly decreased. Furthermore, the mechanisms of NH plasma pretreatment to improve interface properties and device performances were determined by combining secondary ion mass spectrometry (SIMS) measurements, X-ray photoelectron spectroscopy (XPS), and first-principles calculations. The result indicates that the excessive oxidation at the SiO2/SiC interface was limited due to the reduction in the diffusion of oxygen atoms into SiC caused by the surface Si–H and Si–N; NH plasma pretreatment suppressed the generation of interfacial traps by reducing surface pollutants and passivating surface defects, and some N atoms introduced into the SiO2/SiC interface effectively passivated the interfacial electroactive traps.

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Section: Resultsmentioning

confidence: 99%

Reliability and Stability Improvement of MOS Capacitors via Nitrogen–Hydrogen Mixed Plasma Pretreatment for SiC Surfaces

Wei

Bai

Xie

et al. 2023

ACS Appl. Mater. Interfaces

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“…The freestanding 3C-SiC samples underwent a dry oxidation process in the same furnace at 1200 • C for 10 min in an Ar:O 2 (4 slm: 1 slm) ambient followed by a post oxidation anneal at 1200 • C in an Ar:N 2 O (4 slm: 1 slm) ambient since this process has been proven to be highly reliable for 3C-on Si SiC MOSCAPs [12]. A dataset for thermal oxides on 3C-on Si was not included in this study but can be found in a study carried out by Li et al [12]. Aluminium (Al) contacts were formed on top of the oxide layers using an Al wet etch and a 1 µm thick Al ohmic contact was deposited on the backside using electron beam evaporation.…”

Section: Electrical Resultsmentioning

confidence: 99%

“…Furthermore, 3C-on-Si material was provided by NOVASIC, which had an unintentionally doped (2 × 10 16 cm −3 ) n-type 3C-SiC (100) 10 µm thick epitaxial layer which was grown onaxis on a 4 inch Si (100) substrate. MOS-devices, made with a thermal oxide have recently been reported, demonstrating the high quality of this material [12].…”

Section: Methodsmentioning

confidence: 93%

Initial investigations into the MOS interface of freestanding 3C-SiC layers for device applications

Renz

Vavasour

et al. 2021

Semicond. Sci. Technol.

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This letter reports on initial investigation results on the material quality and device suitability of a homo-epitaxial 3C-SiC growth process. Atomic force microscopy surface investigations revealed root-mean square surface roughness levels of 163.21 nm, which was shown to be caused by pits (35 µm width and 450 nm depth) with a density of 1.09 × 10 5 cm −2 which had formed during material growth. On wider scan areas, the formation of these were seen to be caused by step bunching, revealing the need for further epitaxial process improvement. X-ray diffraction showed good average crystalline qualities with a full width of half-maximum of 160 arcseconds for the 3C-SiC (002) being lower than for the 3C-on-Si material (210 arcseconds). The analysis of C-V curves then revealed similar interface-trapped charge levels for freestanding 3C-SiC, 3C-SiC on Si and 4H-SiC, with forming gas post-deposition annealed freestanding 3C-SiC devices showing D IT levels of 3.3 × 10 11 cm −2 eV −1 at E C −E T = 0.2 eV. The homo-epitaxially grown 3C-SiC material's suitability for MOS applications could also be confirmed by leakage current measurements.

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“…The publication [90] points out that extrinsic errors are also still caused by local high electric field strengths. In another publication [91], three error mechanisms are identified using the Weibull distribution on 3C-SiC MOS capacitors. Two error mechanisms are of extrinsic nature (fabrication).…”

Section: B Reliability and Safetymentioning

confidence: 99%

Discussion on Electric Power Supply Systems for All Electric Aircraft

et al. 2020

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The electric power supply system is one of the most important research areas within sustainable and energy-efficient aviation for more-and especially all electric aircraft. This paper discusses the history in electrification, current trends with a broad overview of research activities, state of the art of electrification and an initial proposal for a short-range aircraft. It gives an overview of the mission profile, electrical sources, approaches for the electrical distribution system and the required electrical loads. Current research aspects and questions are discussed, including voltage levels, semiconductor technology, topologies and reliability. Because of the importance for safety possible circuit breakers for the proposed concept are also presented and compared, leading to a initial proposal. Additionally, a very broad review of literature and a state of the art discussion of the wiring harness is given, showing that this topic comes with a high number of aspects and requirements. Finally, the conclusion sums up the most important results and gives an outlook on important future research topics. INDEX TERMS Aviation, aerospace electronics, MEA, AEA, electric power supply systems, dc-dc power converters, power semiconductor devices, wide bandgap semiconductors, high voltage direct current (HVDC), circuit breaker, hybrid circuit breaker.

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A First Evaluation of Thick Oxide 3C-SiC MOS Capacitors Reliability

Cited by 10 publications

References 49 publications

Reliability and Stability Improvement of MOS Capacitors via Nitrogen–Hydrogen Mixed Plasma Pretreatment for SiC Surfaces

Reliability and Stability Improvement of MOS Capacitors via Nitrogen–Hydrogen Mixed Plasma Pretreatment for SiC Surfaces

Initial investigations into the MOS interface of freestanding 3C-SiC layers for device applications

Discussion on Electric Power Supply Systems for All Electric Aircraft

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