“…In piezoresistive sensors, the resistance change may rely on distinct mechanisms: - Resistivity variations—in a semiconductor, as a result of band structure changes induced by pressure [ 122 ], or in composites, as a result of interparticle distance change [ 42 , 123 , 124 ]. For these cases, the following equation may be applicable (Equation (3)): where R is the resistance, ρ is the material resistivity, l is the conductor length, and A is the transverse section area [ 121 ];
- Contact resistance variations—through the modification of the geometry of the sensing element [ 19 , 31 , 125 , 126 , 127 , 128 , 129 , 130 ], by contact area changes induced in interlocked designs [ 38 , 87 , 131 , 132 , 133 , 134 , 135 , 136 ], or through contact area changes in foamy or spongy materials [ 41 , 137 , 138 ]. For these cases, the contact resistance is governed by Equation (4): where R C is the contact resistance and F is the force [ 4 ].
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