A flexible thermoelectric device based on a Bi2Te3-carbon nanotube hybrid

A comprehensive review on Bi2Te3‐based thin films: Thermoelectrics and beyond

“…[ 181 ] The maximum cooling flux ( q max ) and the power output ( P max ) for a TE device are given by where S p and ρ p as well as S n and ρ n are Seebeck coefficients and electrical resistivities of p‐ and n‐type TE legs, respectively. [ 126,182,183 ] To achieve high q max , the PF of TE films must be high, while the filling factor ( f ) of a TE module and the thickness ( l ) of TE legs should be, respectively, large and as small as possible. The P max of TE films is directly proportional to the PF and the temperature difference ( T h − T c ), and is also related to the ratio of the cross‐section area ( A ) and the length ( l ) of TE legs.…”

High performing flexible optoelectronic devices using thin films of topological insulator

“…It has been also observed that bismuth chalcogenide based TIs are very stable even at ambient conditions 36 and show robust nature of Dirac fermions even at room temperature 37 . The unique Bi 2 Te 3 - single walled nanotube networks 38 , 39 and thin films of Bi 2 Te 3 on flexible polyimide substrates 40 were used to make high performing flexible thermoelectric generators for energy harvesting applications. Previously thin films of TIs made from the nanosheets of Bi 2 Se 3 and Bi 2 Te 3 were integrated with the plastic substrates using colloidal nanoplates ink for investigating the optoelectronic properties 41 but films were not studied for their NIR photodetector performances e.g.…”

Construction of a cement–rebar nanoarchitecture for a solution‐processed and flexible film of a Bi2Te3/CNT hybrid toward low thermal conductivity and high thermoelectric performance

“…The extreme oxygen sensitivity of CNTs leads to the p‐type characteristic in air 20,21 ; fortunately, their n‐type characteristics can be realized by treatment with amino‐substituted rylene dimides, 22 diethylenetriamine doping, and subsequent CaH 2 treatment, 23 or cationic surfactants, 24 and so forth. To date, a few publications of n‐type Bi 2 Te 3 /CNT hybrids have been reported using the magnetron sputtering technique or the hot‐press method 25–27 . For example, in 2019, Jin et al 25 reported flexible films prepared by anchoring layer‐structured highly ordered Bi 2 Te 3 nanocrystals on a CNT scaffold, which showed both n‐type high TE performance (ZT up to 0.89 at room temperature) and good flexibility.…”

“…Later, they sequentially found that by decoupling phonon and carrier scattering at SWCNTs/Bi 2 Te 3 interfaces, the TE performance could be improved, and they further fabricated a flexible TE device based on the Bi 2 Te 3 /CNT hybrid 26 . In addition, Liu et al 27 reported flexible TE materials and devices based on a Bi 2 Te 3 /CNT hybrid fabricated using a magnetron sputtering technique. Nevertheless, no large‐area flexible films with convenient processing are available, and the major problem is the poor solution processability of the hybrids.…”

“…To date, a few publications of n-type Bi 2 Te 3 / CNT hybrids have been reported using the magnetron sputtering technique or the hot-press method. [25][26][27] For example, in 2019, Jin et al 25 reported flexible films prepared by anchoring layer-structured highly ordered Bi 2 Te 3 nanocrystals on a CNT scaffold, which showed both n-type high TE performance (ZT up to 0.89 at room temperature) and good flexibility. Later, they sequentially found that by decoupling phonon and carrier scattering at SWCNTs/Bi 2 Te 3 interfaces, the TE performance could be improved, and they further fabricated a flexible TE device based on the Bi 2 Te 3 / CNT hybrid.…”