In this study, a 1D oriented hollow SiO 2 /TiO 2 (HST) rod-like material was successfully fabricated via a sequential combination of sol-gel use, TiO 2 incorporation, and a sonication-mediated etching and redeposition method. This carefully manipulated new material has numerous advantageous physical and intrinsic properties, such as increased surface area, pore volume, interfacial polarization, and dielectric properties introduced from each synthetic step. The synthesized HST rod was adopted as an electrorheological (ER) material for practical examination of these characteristics. The HST rod materials exhibited 1.5-and 3-fold higher ER performance than a non-metal SiO 2 rod and a non-hollow SiO 2 /TiO 2 core/shell (ST/CS) rod, which are interim synthetic steps. Moreover, the HST rod exhibited remarkable 6-fold increased ER efficiency relative to a sphere-shaped hollow SiO 2 /TiO 2 particle synthesized using a similar experimental method. These notable enhancements in ER performance are attributed to incorporation of the experimentally designed characteristics of the HST rod: 1D structure, metal oxide incorporation, and creation of a hollow cavity. For future study, we expect that these versatile HST rod materials can be applied in a range of fields including drug delivery, photo-catalysis, and as building blocks.SiO 2 rod, ST/CS rod, and HST rod (L/D ¼ 3), (2) TEM micrographs HCl untreated and calcined SiO 2 rod and resulting HST rod, (3) TEM micrographs of shell thickness controlled HST rod, (4) TEM micrographs of SiO 2 rod, ST/CS rod, and HST materials with varying aspect ratio (L/D ¼ 1, 2, 6), (5) low-magnied TEM micrographs of various HST materials (L/D ¼ 1, 2, 6), (6) physical parameters of various HST materials, (7) porosity, pore volume, and BET surface area of HST rod (L/D ¼ 3), (8) EDS analysis of SiO 2 rod, ST/CS rod, and HST rod (L/D ¼ 3), (9) STEM elemental mapping of SiO 2 rod (L/D ¼ 3), (10) FT-IR spectra and XRD pattern of SiO 2 rod, ST/CS rod, and HST rod (L/D ¼ 3), (11) FT-IR spectra of HCl treated and untreated SiO 2 rod, (12) atomic compositions of various HST materials (L/D ¼ 1, 2, 6), (13) shear stress of HST material-based ER uids with varying aspect ratio (L/D ¼ 1, 2, 6), (14) dielectric properties of HST sphere. See