A frame-transfer CCD color imager with vertical antiblooming

Steeg, M. J. H. van de; Peek, H.L.; Bakker, J.; Pals, J.A.; Dillen, Bart; Oppers, J.

doi:10.1109/t-ed.1985.22141

Cited by 30 publications

(9 citation statements)

References 6 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…During this operation, the STG1 and STG2 gates are set at a certain potential where the charge capacity of the STGs is typically lower than the charge handling capacity of the horizontal register. The excess charge is drained to the substrate by using a vertical anti-blooming structure [5]. After the skimming operation the charge is transferred to the horizontal register by switching on BTG1 and BTG2 (figure 3k).…”

Section: Rgb Charge Binning Operationmentioning

confidence: 99%

A 28 mega pixel large area full frame CCD with 2/spl times/2 on-chip RGB charge-binning for professional digital still imaging

Draijer

Polderdijk

Heide

et al. 2005

IEEE InternationalElectron Devices Meeting, 2005. IEDM Technical Digest.

View full text Add to dashboard Cite

CCD imagers for professional digital still cameras (DSCs) require in general high resolution. However for some applications, high sensitivity and high speed are more important and can be exchanged for resolution. A concept is presented in which the resolution of the imager will be decreased in binning mode while the sensitivity and frame rates are increased. For color CCDs, the RGB Bayer color filter pattern should be preserved after charge binning without discarding charge. The first results of this new concept are presented. IntroductionA 28 Mega pixel CCD image sensor with a novel 2x2 onchip RGB charge-binning concept for the high-end digital still camera market is presented. Although the resolution of the imager will be decreased in charge binning mode, the advantages of the binning concept can be found in higher sensitivity (4x), better signal to noise ratio (2x) and increased frame rates (3-4x) for applications that are less demanding with respect to resolution. Examples are motion (sport) digital still images, low-light image capturing and auto-focus information gathering. On-chip charge binning is a common technique for monochrome CCDs [1]. However, for color CCDs it is required that the RGB Bayer color filter pattern is reconstructed after the charge binning, and preferably, this should be done without discarding any of the captured charge packets. The new binning concept presented here meets these requirements and the first evaluation results and the overall device performance are reported.

show abstract

Section: Rgb Charge Binning Operationmentioning

confidence: 99%

A 28 mega pixel large area full frame CCD with 2/spl times/2 on-chip RGB charge-binning for professional digital still imaging

Draijer

Polderdijk

Heide

et al. 2005

IEEE InternationalElectron Devices Meeting, 2005. IEDM Technical Digest.

View full text Add to dashboard Cite

show abstract

“…Although more efficient with respect to space utilization, the resulting even/odd non-uniformity causes an undesirable half Nyquist moire interference pattern. Vertical antiblooming pixels are fabricated in a p-well on an n-type substrate [3,4] instead of the typical structure of in a p-epi on a p + substrate. During operation of the device without signal charge, the n-buried layer and the p-well underneath the photogate are fully depleted.…”

Section: Lateral Antibloomingmentioning

confidence: 99%

<title>Surface channel clocked antiblooming technique for area-array CCD image sensors</title>

et al. 1992

View full text Add to dashboard Cite

Implementation ofover-illumination protection on area array image sensors has typically involved significant modifications to device design and/or processing. These modifications have caused degradation of device performance, for example, lateral antiblooming reduces fill factor and vertical antiblooming reduces near infra-red (NIR) quantum efficiency (QE).Clocked antiblooming is a technique that does not require any processing or design changes and does not degrade fill factor or MR QE. The technique involves clocking the imaging phases into, and out of, inversion during the integration time and relying on the surface recombination of electrons and holes to eliminate excess signal charge.The technique described in this paper allows clocked antiblooming with surface channel operation thus permitting large full well packets with small pixel geometries. Although surface channel operation is less efficient in terms of charge transfer efficiency, there are some applications where maximum full well charge storage capability is important.

show abstract

“…As this gate is not clocked, the charge packet is injected onto the floating diffusion when the clocked phase goes negative. The floating diffusion is coupled to the first gate of a conventional output circuit, as was described elsewhere [22]. The floating diffusion is reset to the reset drain potential by means of a reset gate.…”

Section: Design and Technologymentioning

confidence: 99%

The tacking CCD: a new CCD concept

Bakker

Esser

Peek

et al. 1991

IEEE Trans. Electron Devices

Self Cite

View full text Add to dashboard Cite

Abstract-The Tacking CCD is a new type of charge transport mechanism that is suitable for junction-as well as MOStype CCD's. A specific form, the Trenched Tacking CCD (TTCCD), promises high pixel density and high charge handling capability per unit of surface area. The TTCCD structure is suitable for making new types of solid-state image sensors with increased light sensitivity and there is the possibility of incorporating a vertical overflow drain. First samples of the TTCCD have been realized and its functionality has been confirmed.

show abstract

A frame-transfer CCD color imager with vertical antiblooming

Cited by 30 publications

References 6 publications

A 28 mega pixel large area full frame CCD with 2/spl times/2 on-chip RGB charge-binning for professional digital still imaging

A 28 mega pixel large area full frame CCD with 2/spl times/2 on-chip RGB charge-binning for professional digital still imaging

<title>Surface channel clocked antiblooming technique for area-array CCD image sensors</title>

The tacking CCD: a new CCD concept

Contact Info

Product

Resources

About