A frequency-tunable amplifier with a simple tunable admittance inverter

Uchida, Hirohisa; Ogura, K.; Konishi, Y.; Makino, Shigeru

doi:10.1109/eumc.2005.1608854

Cited by 6 publications

(4 citation statements)

References 7 publications

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“…L-band frequency tunable amplifier using the varactor [1], Xband frequency tunable low noise amplifier (LNA) using tunable filter [2], tunable LNA for 3.1 to 10 GHz ultra wide band system [3] are examples for the frequency tunable amplifiers. Frequency tunable amplifiers in more higher frequency band at Ku-band [4,5] have been proposed.…”

Section: Introductionmentioning

confidence: 99%

Initial verification of a bandwidth tunable Ku-band power amplifier designed by the HySIC concept

2020

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In this letter, an initial verification results of a bandwidth tunable power amplifier in Ku-band designed by the hybrid semiconductor integrated circuit (HySIC) concept is reported. A GaAs monolithic microwave integrated circuit (MMIC) and a Si radio frequency integrated circuit (RFIC) were utilized as the HySIC configuration in the circuit design. For the purpose of initial confirmation of this design validity, the GaAs and Si chips were fabricated and packaged onto the copper tungsten plate with gold plating. As measured results, the lower cutoff frequency was changed from 9.8 GHz to 11.9 GHz, resulting in the bandwidth tunability in Ku-band.

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Section: Introductionmentioning

confidence: 99%

Initial verification of a bandwidth tunable Ku-band power amplifier designed by the HySIC concept

2020

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“…In order to solve these problems, a lot of research has reported multiband=multimode and reconfigurable RF systems such as tunable antennas, filters, power amplifiers, and matching networks. [1][2][3][4][5][6][7][8] In these systems, tunable capacitors are a key component. RF-MEMS tunable capacitors are more suitable for these systems than any other devices such as p-i-n diodes, silicon-on-insulator (SOI) switches, [9][10][11] or barium-strontium-titanate (BST) type tunable capacitors, 12) thanks to their low loss and excellent linearity.…”

Section: Introductionmentioning

confidence: 99%

CMOS-embedded high-power handling RF-MEMS tunable capacitor using quadruple series capacitor and slit with dielectric bridges structure

Yamazaki

Kurui

Saito

et al. 2018

Jpn. J. Appl. Phys.

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In this paper, we report on a high-power handling RF-MEMS tunable capacitor that has a quadruple series capacitor (QSC) and a movable electrode using a slit with dielectric bridges (SDB) structure. The QSC structure consists of two fixed metal–insulator–metal (MIM) capacitors and two MEMS capacitor elements connected in series, and enables reduction of the RF voltage to the MEMS capacitors. The SDB structure is able to increase the release voltage without increasing the pull-in voltage. The combination of these structures enables improving power handling capabilities. A capacitor bank using QSC and SDB structures was fabricated by a micromachining process above CMOS control circuits. Measurement results demonstrate the excellent power handling capability up to +44 dBm for cold switching, and up to +35 dBm under hot switching. Moreover, the Q-factor of the capacitor bank is very high that is above 150 at 1 GHz, and the capacitance can be changed from 1.1 to 5.3 pF at a resolution of 4 bits by the internal control circuits thanks to monolithic integration.

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“…To the authors' knowledge, the impact of using tunable matching networks on amplifier efficiency and linearity has not been investigated previously. Although there are many tunable matching network designs, [2,15,25,28,32,33,35,38,39] examples of complete tunable amplifier modules are not many [6,8,11,18,37]. Most of the tunable amplifiers presented in the literature are designed for frequencies between 10-40 GHz and provide up to 10% tunability.…”

Section: Introductionmentioning

confidence: 99%

“…This frequency band of operation and range of tunability is insufficient for the realization of the commercial SDR concept. Furthermore, no information was supplied in [6,8,11,18,37] regarding the efficiency and linearity of these tunable amplifiers. However, it is widely accepted that the linearity and efficiency of RF front-end components are bottlenecks in reconfigurable radio design [16,36].…”

Section: Introductionmentioning

confidence: 99%

Design and Analysis of Frequency-Tunable Amplifiers using Varactor Diode Topologies

Nesimoğlu

2011

Circuits Syst Signal Process

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The design of frequency-tunable amplifiers is investigated and the tradeoff between linearity, efficiency and tunability is revealed. Several tunable amplifiers using various varactor diode topologies as tunable devices are designed by using loadpull techniques and their performances are compared. The amplifier using anti-series distortion-free varactor stack topology achieves 38% power added efficiency and it may be tuned from 1.74 to 2.36 GHz (about 35% tunable range). The amplifier using anti-series/anti-parallel topology is tunable from 1.74 to 2.14 GHz (about 23% tunable range) and provides 42% power added efficiency. It is demonstrated that tunable amplifiers using distortion-free varactor stack topologies provide better power added efficiency than the tunable amplifiers using reverse biased varactor diodes and their linearity is similar to that of a conventional amplifier. These amplifiers may facilitate the realization of frequency agile radio frequency transceiver front-ends and may replace several parallel connected amplifiers used in conventional multimode radios.

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A frequency-tunable amplifier with a simple tunable admittance inverter

Cited by 6 publications

References 7 publications

Initial verification of a bandwidth tunable Ku-band power amplifier designed by the HySIC concept

Initial verification of a bandwidth tunable Ku-band power amplifier designed by the HySIC concept

CMOS-embedded high-power handling RF-MEMS tunable capacitor using quadruple series capacitor and slit with dielectric bridges structure

Design and Analysis of Frequency-Tunable Amplifiers using Varactor Diode Topologies

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