2010 IEEE International Solid-State Circuits Conference - (ISSCC) 2010
DOI: 10.1109/isscc.2010.5433951
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A fully integrated 77GHz FMCW radar system in 65nm CMOS

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Cited by 64 publications
(19 citation statements)
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“…For low-power CMOS integration on silicon, the ongoing adaptation of sub-90nm RF-CMOS back-end solutions for vehicular radar at 77 GHz will be a critical starting point as it will provide a complete technology base with on-chip antennas as well as compact transceivers that can reach massmarkets [13]. Encouraged by recent demonstration of a 410 GHz oscillator based on 90nm CMOS devices [14] and empowered by ongoing device scaling, RF-CMOS circuitry will play a central role in the ultra low power integration up to 600GHz [15].…”
Section: Trends Of Wireless Transceiversmentioning
confidence: 99%
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“…For low-power CMOS integration on silicon, the ongoing adaptation of sub-90nm RF-CMOS back-end solutions for vehicular radar at 77 GHz will be a critical starting point as it will provide a complete technology base with on-chip antennas as well as compact transceivers that can reach massmarkets [13]. Encouraged by recent demonstration of a 410 GHz oscillator based on 90nm CMOS devices [14] and empowered by ongoing device scaling, RF-CMOS circuitry will play a central role in the ultra low power integration up to 600GHz [15].…”
Section: Trends Of Wireless Transceiversmentioning
confidence: 99%
“…Also, the dominant applications in the 1 THz range have been medical and security imaging technologies that can do without on-chip integration. However, thanks to the vehicular anti-collision radar and multi-media driven indoor wireless network applications in the 60-90 GHz range, onchip antenna solutions have recently gained momentum [13]. Thus, while much less developed compared to other pieces of the WiNoC puzzle, compact on-chip antenna solutions also appear to be within the reach of silicon mm-wave integration as will be discussed in more detail below.…”
Section: Antenna Considerationsmentioning
confidence: 99%
“…Figure 9.5.4(c) illustrates a photo of the assembly. The LNA, PA, and RF mixer designs are based on our previous work in 60 and 77GHz [2,4]. The 3-stage LNA achieves gain of 18.5dB, and the 5-stage PA 13dB gain and 6dBm P 1dB .…”
mentioning
confidence: 99%
“…As a result, the two limiters sharpen the sinusoids as square functions, and send them to an edge-triggered flip-flop. The error polarity is therefore applied to (V/I) 2 , which provides pumping current I CP2 (=5I CP1 ) to adjust the VCO control voltage accordingly. Note that to minimize undesired disturbance on the control line, the FD loop must be disabled when the loop is locked.…”
mentioning
confidence: 99%
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