A fully integrated VCO at 2 GHz

Zannoth, M.; Kolb, B.; Fenk, J.; Weigel, Robert

doi:10.1109/4.735539

Cited by 82 publications

(11 citation statements)

References 8 publications

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“…Also, when compared to nontapped VCO's, the base current shot-noise and noise of the biasing network are reduced with the square of the quasi-tapping factor. Note that, quasi-tapping capacitances CA and C,, introduced in this paper, serve to define the quasi-tapping ratio and not, as presented in some references [3], to facilitate biasing of the transistors in the active part of the oscillator. Unlike such a constellation, where the influence of these capacitors on both the LC-tank and the performances of the oscillator is fully neglected, in the upcoming analysis it will be shown that the role of the quasi-tapping capacitances CA and C,, in the oscillator under consideration, is substantially different, and that they determine the performances of the oscillator, being phase-noise and powerconsumption, equally with the other elements in the circuitry.…”

Section: Phase-noise Model Of a Quasi-tapped Vcomentioning

confidence: 99%

Concept of phase-noise tuning of bipolar voltage-controlled oscillators

Tasic

Serdijn

2002 IEEE International Symposium on Circuits and Systems. Proceedings (Cat. No.02CH37353)

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So far, oscillators have been designed to perform a specific task while the key parameters such as phase-noise and power consumption are set by the hardware design and not by the communication system in an adaptive way. As the communication channel is often subject to changes, the conditions under which the oscillator operates should be changed as well. Therefore, the concept of design for adaptivity must be considered as a comerstone in the design of today's telecommunication systems. Accordingly, the concept of phasenoise tuning, introduced in this paper, shows how oscillators can trade performance for power consumption in an adaptive way. The presented model of a quasi-tapped bipolar VCO reveals the resulting trade-offs between phase-noise and power consumption imposed by the design for adaptivity.

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Section: Phase-noise Model Of a Quasi-tapped Vcomentioning

confidence: 99%

Concept of phase-noise tuning of bipolar voltage-controlled oscillators

Tasic

Serdijn

2002 IEEE International Symposium on Circuits and Systems. Proceedings (Cat. No.02CH37353)

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“…The GaInP/GaAs HBT device has small low-frequency noise because of the low base resistance, the suppression of trap-related 1/f noise by the device passivation ledge over the extrinsic base surface, and the absence of DX trap center in the GaInP material. A stacked transformer has the highest mutual coupling factor (close to one) between two spiral inductors [19] and the GaAs semi-insulating substrate results in a high self-resonant frequency for the stacked transformer. The quadrature VCO at 5.38 GHz has phase noise of -127.4 dBc/Hz at 1 MHz offset frequency, output power of -4 dBm and a figure of merit (FOM) -191 dBc/Hz.…”

Section: The Implementation Of Vcosmentioning

confidence: 99%

High Performance GaInP/GaAs HBT Radio Frequency Integrated Circuits at 5 GHz

Meng

Lin

et al.

2005 Asia-Pacific Microwave Conference Proceedings

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Several high performance GaInP/GaAs heterojunction bipolar transistor (HBT) radio frequency integrated circuits (RFICs) implemented by our research group are reviewed in this paper. These demonstarted RFICs include source inductively degenerated cascode low noise amplifiers with inter-stage matching, shunt-series shunt-shunt dual feedback wideband amplifiers, broad band Gilbert down-conversion micromixer, Gilbert down-conversion mixers with poly-phase filters for image rejection, Gilbert up-conversion mixers with output LC current mirror and quadrature VCOs. In addition, a method to extract the GaInP/GaAs HBT device structure is also developed. 0-7803-9433-X/05/$20.00 ©2005 IEEE.APMC2005 Proceedings

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“…Their typical Q is around 4-5 at 2GHz on high ohmic silicon substrates. [2] To r-cducc the substrate losses we employed a special structure to block the parasitic eddy currmts in the substrate responsible for the stitxtratc losscs. Our method resulted in 15% increase in the quality factor of the spirals which enabled us to achieve improoved phase noise performdnce with this hlly integrated oscillator circuit.…”

Section: Introductionmentioning

confidence: 99%

Fully integrated RF VCO for wireless transceivers

Mernyei¹,

Pardoen²,

Hoss³

et al.

1998 URSI International Symposium on Signals, Systems, and Electronics. Conference Proceedings (Cat. No.98EX167)

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Iiideung terms VCC), integrated inductor. phase iioise .A I3 ST R A CT I NTR ODU CTI ON A t all RF wireless applications where we have to iriiplement VCOs the resonators are critical parts of the systcm. Using off-chip solutions \\'ill cause problems with packaging, the pwxiitics of the packages will be part of the rcsoiiator circuitry so their accurate modeling is ii must [ I ] . Furthermore the package wdl c;iIisc unwanted couphgs between the rcsonator pins where large RF currents can be prcscnt and other parts of the circuit. On-Chip resonators are good candidates to avoid packaging probkms. The most common intcgratcci rcsona[ors contain simple intcgratcd spirals which suffer from the low quality factor dui. to the ohmic and substrate losses. Their typical Q is around 4-5 at 2GHz on high ohmic silicon substrates. [2]To r-cducc the substrate losses we employed a special structure to block the parasitic eddy currmts in the substrate responsible for the stitxtratc losscs. Our method resulted in 15% increase in the quality factor of the spirals which enabled us to achieve improoved phase noise performdnce with this hlly integrated oscillator circuit.

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A fully integrated VCO at 2 GHz

Cited by 82 publications

References 8 publications

Concept of phase-noise tuning of bipolar voltage-controlled oscillators

Concept of phase-noise tuning of bipolar voltage-controlled oscillators

High Performance GaInP/GaAs HBT Radio Frequency Integrated Circuits at 5 GHz

Fully integrated RF VCO for wireless transceivers

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