A fully matched 8W X-band PHEMT MMIC high power amplifier

Chu, Chia‐Chi; Huang, Haikun; Liu, H.Z.; Chiu, Ray-Jay; Lin, Chih‐Ming; Wang, C.C.; Wang, Y.H.; Hsu, Chuan-Chien; Wu, Wang; Wu, Chang-Luen; Chang, Christophe

doi:10.1109/csics.2004.1392514

Cited by 9 publications

(6 citation statements)

References 9 publications

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“…The X-band MMICs were processed by conventional photolithography on an AlGaAs/InGaAs/GaAs PHEMT structure prepared by molecular beam epitaxy [13,14]. The fabrication includes five major steps: (1) Device isolation: The etching of AlGaAs and GaAs for the mesa was achieved by using an HF-based solution.…”

Section: Methodsmentioning

confidence: 99%

A fully matched 9 W compact PHEMT MMIC high power amplifier for X‐band phase array radar applications

Chu

Huang

Liu

et al. 2006

Micro & Optical Tech Letters

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This paper presents a compact X‐band, 9 W AlGaAs/InGaAs/GaAs PHEMT MMIC high power amplifier. This amplifier is designed to fully match a 50 Ω input and output impedance. Based on 0.35 μm gate‐length power PHEMT technology, a two‐stage power amplifier is fabricated on a 3‐mil thick wafer. While operating under 9 V DC bias condition, the characteristics of 17 dB small‐signal gain, an average of 9 W continuous‐wave output power, and 34% power added efficiency from 9.0 to 10.5 GHz can be achieved. © 2006 Wiley Periodicals, Inc. Microwave Opt Technol Lett 49: 257–261, 2007; Published online in Wiley InterScience (www.interscience.wiley.com). DOI 10.1002/mop.22102

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Section: Methodsmentioning

confidence: 99%

A fully matched 9 W compact PHEMT MMIC high power amplifier for X‐band phase array radar applications

Chu

Huang

Liu

et al. 2006

Micro & Optical Tech Letters

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“…1. The models for 0.6, 1.5, 6, and 16.8 mm PHEMT were scaled up from the 1.2-mm PHEMT model for circuit simulation and optimization [8], [11], [12].…”

Section: Circuit Designmentioning

confidence: 99%

“…Previously, several respectable PA achievements for X-band have been reported [1]- [8]. These MMICs present the performances with high power and high power added efficiency (PAE); however, the small signal gain of these PAs are not high enough for the phase array radar applications and the chip dimensions are still too large.…”

Section: Introductionmentioning

confidence: 99%

A 9.1–10.7 GHz 10-W, 40-dB Gain Four-Stage PHEMT MMIC Power Amplifier

Chu

Huang

Liu

et al. 2007

IEEE Microw. Wireless Compon. Lett.

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This letter presents a compact X-band high gain and high power four-stage AlGaAs/InGaAs/GaAs pseudomorphic high electron mobility transistor (PHEMT) monolithic microwave integrated circuit (MMIC) high power amplifier (PA). This amplifier is designed to fully match a 50-input and output impedance. Based on 0.35-m gate-length power PHEMT technology, this PA MMIC is fabricated on a 3-mil thick wafer. While operating under 8 V and 2700-mA dc bias condition, the characteristics of 40-dB smallsignal gain, a 10-W continuous-wave saturation output power, and 33% power added efficiency at 9.7 GHz can be achieved. Index Terms-Monolithic microwave integrated circuit (MMIC), power amplifier (PA), pseudomorphic high electron mobility transistors (PHEMTs), X-band.

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“…Recently, several HPAs have been fabricated on different substrates such as silicon [1,2], GaAs [3][4][5][6][7][8][9][10][11][12][13][14] and GaN [15][16][17][18]. GaN technologies have superior performance in power applications due to high breakdown voltage of the transistors, which results in high output power density.…”

Section: Introductionmentioning

confidence: 99%

“…A number of GaAs HPAs have been reported in the X and Ku frequency bands. For instance, 8-10 W HPAs are reported in [4][5][6][7][10][11][12][13]; however, all of the HPAs are narrowband designs. Hek has introduced a wideband PA in pulse mode regime [9], however the performance is degraded in continuous-wave (CW) mode.…”

Section: Introductionmentioning

confidence: 99%

Highly reliable 10‐W X/Ku‐band pHEMT monolithic microwave integrated circuit power amplifier

Frounchi

Mohammadi

Medi

2016

IET Microwaves, Antennas & Propagation

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In this study, a reliable 10 W high‐power amplifier (HPA) is presented along with its design procedure. Implemented on a 0.25‐μm InGaAs/AlGaAs/GaAs pseudomorphic high electron mobility transistor (pHEMT) process, the designed HPA achieves power added efficiency (PAE) of more than 33% across the 7.8–12.8 GHz band. The proposed two‐stage PA provides 15 dB large signal gain with an average small‐signal gain of 18 dB. Peak results are achieved at 12.2 GHz with 40.8 dBm output power and 44% PAE. The reliability of the designed HPA is studied in detail along with a thorough discussion of related concerns.

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A fully matched 8W X-band PHEMT MMIC high power amplifier

Cited by 9 publications

References 9 publications

A fully matched 9 W compact PHEMT MMIC high power amplifier for X‐band phase array radar applications

A fully matched 9 W compact PHEMT MMIC high power amplifier for X‐band phase array radar applications

A 9.1–10.7 GHz 10-W, 40-dB Gain Four-Stage PHEMT MMIC Power Amplifier

Highly reliable 10‐W X/Ku‐band pHEMT monolithic microwave integrated circuit power amplifier

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