A fully-numerical model for PiN diodes implemented in the Saber circuit simulator

Abstract

The integration of a full 1D numerical model for a power diode, into a commercial circuit simulator (Saber) is demonstrated for the ® rst time. The model is based upon the solution of the full set of device equations making very few simpli-® cations, thus retaining all the key elements of the physical operation of the device, and as such is therefore valid under all operating conditions. The model is veri® ed against experimental measurements and full 2D numerical simulations of the device. The method used here can also be applied to model other power devices, which exhibit charge storage e ects such as thyristors and IGBTs.

Photocapacitance study at p–i–n photodiode by numerical C–V integration

“…However, the proper estimation of the impurity profile still remains as a main problem especially for p-i-n optoelectronic devices. Several experimental techniques have been used for the display of the doping profile in a material, among these secondary ion mass spectroscopy (SIMS), spreading resistance profiling (SPR) [4][5][6], C-V [7][8][9] are widely used. In addition, data about electrically active defects are deduced from deep level transient (DLTS) [10] and admittance spectroscopy (AS) [11] techniques.…”