The integration of a full 1D numerical model for a power diode, into a commercial circuit simulator (Saber) is demonstrated for the ® rst time. The model is based upon the solution of the full set of device equations making very few simpli-® cations, thus retaining all the key elements of the physical operation of the device, and as such is therefore valid under all operating conditions. The model is veri® ed against experimental measurements and full 2D numerical simulations of the device. The method used here can also be applied to model other power devices, which exhibit charge storage e ects such as thyristors and IGBTs.

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