A GaAs vertical PIN diode production process

A new bias-dependent small-signal GaAs PIN diode model is described that is suitable for use in design of circuits like variable attenuators and limiters. The equivalent circuit parameters are extracted from bias-dependent S-parameters measured from 1 to 26 GHz for 35 bias currents. Bias-dependent equations are then curve fitted, and then ( ) incorporated into a commercially available computer-aided design CAD simulator. Measured and modeled data track each other very well over a range of bias conditions.

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“…The microwave equivalent circuit, which is used to represent the intrinsic PIN diode, is shown in Figure 5. The inductor L in this circuit 1…”

Section: Equivalent Circuit Parameters For the Intrinsic Devicementioning

confidence: 99%

“…The R and C elements were utilized to determine the inductance L . The values for R 1 and C are calculated at a frequency of 1 GHz at each bias point. To this parallel RC combination, a series R and a series L are added.…”

Section: Extracting a Value For The Inductance Lmentioning

confidence: 99%

Bias-dependent small-signal modeling of GaAs PIN diodes

Fejzuli

Dunleavy

Snider

et al. 2001

Int J RF and Microwave Comp Aid Eng

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Small signal modeling of GaAs PIN diodes aided by electromagnetic analysis

Shuts

Dunleavy

Fejzuli

et al. 2001

Int J RF and Microwave Comp Aid Eng

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A systematic procedure is described for determination of GaAs PIN diode equivalent circuit models from measured S-parameter data combined with an electromagnetic analysis of the feed structure. A new parasitic and intrinsic model topology is proposed, and found to be better suited than prior models for the particular GaAs PIN structures considered in this work. Models were developed for forward bias currents ranging from 0.01 to 100 mA, and example measured and modeled results are included to validate the approach.

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