Plasma-enhanced chemical vapor deposited boron carbide (B1-xCx) thin films are shown to be a potential electronic material suitable for high temperature devices. The boron carbide films make excellent p-n heteroj unction diodes with /i-type silicon substrates. The B1-xCx/Si heteroj unction diodes are demonstrated to have rectifying properties at temperatures above 200°C and reverse current is strongly dependent on the energy of the band gap of the boron carbide films.

Patwa, A.; Kher, S.S.; Boag, N.M.; and Dowben, Peter A., "Novel methods for the fabrication of ferromagnetic nickel and nickel boride thin films" (1994 Metal-rich nickel boride thin films fabricated from boron-containing precursor compounds by a cluster deposition process are shown to be ferromagnetic. The metal-rich films fabricated by this approach exhibit hysteresis curves similar to those obtained for pure nickel foils. These films are a mixture of pure nickel and the N&B nickel boride phases. It is postulated that the hysteresis curves with smaller remnant magnetizations obtained from these films are a consequence of Ni,B inclusions within the films. Other novel organometallic source compounds for nickel chemical-vapor deposition are briefly reviewed.

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