A gain boosting single stage cascode LNA for millimeter-wave applications

Harsoori, Mohammed Mazharuddin; Zulkifli, Tun Zainal Azni; Abbas, Umber; Sattar, Sami

doi:10.1109/primeasia.2017.8280376

Cited by 2 publications

(3 citation statements)

References 13 publications

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“…The gain of LNA is improved by the stacking of CS and CG, where the Miller effect of CS is cancelled by CG. The linearity is enhanced at the cost of gain by introducing feedback [23]. In short, this approach allows a good compromise between gain and linearity.…”

Section: Cascode With Dual Feedbacksmentioning

confidence: 99%

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Analysis and Design of a Wideband Low-Noise Amplifier with Bias and Parasitic Parameters Derived Wide Bandpass Matching Networks

Zhao

Wang

et al. 2022

Electronics

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This paper proposes a 110% relative bandwidth (RBW) low-noise amplifier (LNA) for broadband receivers with flat gain, low noise and high linearity. Bias and parasitic parameters derived wide bandpass (BPDWB) matching networks and a cascode with dual feedbacks are introduced for broadband performance. Matching network design procedures are demonstrated, and results show that the frequency response of the network fits the target impedance well from 1 GHz to 3.5 GHz. The proposed BPDWB network improves the design efficiency and enhances the prediction accuracy of impedance matching. The proposed LNA in 0.25 μm GaAs pseudomorphic high electron mobility transistor (GaAs pHEMT) technology realizes a minimum NF of 0.45 dB at 1.6 GHz where the NF is less than 0.55 dB within the operating frequency band. A flat gain of 22.5–25.2 dB is achieved with the input voltage standing wave ratio (VSWR) below 1.22 and output VSWR less than 2.5. In addition, the proposed LNA has good linearity where the output third-order intercept point (OIP3) is better than +31.5 dBm, and the output 1 dB compression point (OP1dB) is better than +19 dBm over the wide frequency range.

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Section: Cascode With Dual Feedbacksmentioning

confidence: 99%

“…In theory, simultaneous noise and input impedance matching can be attained. And there is no impact on the noise performance in the case of ideal inductance [23]. However, due to the non-ideality associated with L s , additional noise will be introduced to the amplifier.…”

Section: Bias and Parasitic Parameters Derived Wide Bandpass Matching...mentioning

confidence: 99%

Analysis and Design of a Wideband Low-Noise Amplifier with Bias and Parasitic Parameters Derived Wide Bandpass Matching Networks

Zhao

Wang

et al. 2022

Electronics

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show abstract

“…Beyond that, in [10], the low gain was another drawback that made additional stages necessary. In comparison with CS and CG structures, the cascode LNA possesses advantageous high gain, broadband matching, and high reverse isolation, as seen in various works [1,2,[13][14][15][16][17][18][19][20][21][22][23][24]. In this paper, a wideband LNA is proposed in multi-band mode based on the cascode structure.…”

Section: Introductionmentioning

confidence: 99%

A Multi-Band LNA Covering 17–38 GHz in 45 nm CMOS SOI

et al. 2022

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This paper presents a multi-band low-noise amplifier (LNA) in the 45-nm CMOS silicon-on-insulator (SOI) process. The LNA consists of three stages, with the differential cascode amplifier as the core structure. The first stage is mainly responsible for input matching to ensure favourable noise characteristics and bandwidth, while the subsequent stages increase the gain. Moreover, the LNA utilizes baluns for input/output and interstage impedance matching. Switch capacitances are added to switch the three operating bands of the LNA, which cover 17–38 GHz overall. Measurement results show that the proposed LNA achieves a gain (S21) of 23.0 dB and a noise figure (NF) of 4.0 dB.

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A gain boosting single stage cascode LNA for millimeter-wave applications

Cited by 2 publications

References 13 publications

Analysis and Design of a Wideband Low-Noise Amplifier with Bias and Parasitic Parameters Derived Wide Bandpass Matching Networks

Analysis and Design of a Wideband Low-Noise Amplifier with Bias and Parasitic Parameters Derived Wide Bandpass Matching Networks

A Multi-Band LNA Covering 17–38 GHz in 45 nm CMOS SOI

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